Datasheet > MPN7453A-C12

MPN7453A-C12

更新时间： 2025-09-17 19:42:51

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
3页	675K
描述
反向峰值电压（Vr）:300V;总电容（CT）:0.15pF @ 50V，100MHz;导通电阻（RS）:1 欧姆 @ 100mA，100MHz;元器件封装:模具;

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中文翻译

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数据手册

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MPN7453A-C12 数据手册

High Power Silicon PIN Diodes

Silicon PIN Diode Chips

Rev. V1

Features



Voltage Breakdown up to 800 V

Passivated Mesa Construction

Screening Available per MIL-PRF-19500 / 38534

Description

These silicon PIN diodes feature fully passivated

mesa designs with tri-metalization for reliable

operation under the most demanding conditions.

Electrical Specifications: T_A= +25°C (unless otherwise specified)

Minority

Series

Breakdown

Voltage

V_B

Junction

Capacitance

C_J

Carrier

Lifetime

Resistance

R_S

I-Region Contact

Theta

Chip Size

Mils (sq.)

I_F= 10 mA

I_R= 6 mA

50% recovery

Width

Diameter

I_F= 100 mA

(100 MHz)

Part #

I_R= 10 µA

V_R= 50 V

°C/W

µm

mils

Min.

Max.

Min.

Max.

Nominal

MPN7330

MPN7360

MPN7370

MPN7380

MPN7420

MPN7453A

MPN7453B

MPN7453C

300

600

700

800

400

300

400

300

0.5

0.4

0.3

0.5

1.5

1.0

0.9

0.7

0.40

1.00

2.30

0.60

0.08

0.15

0.20

0.25

500

2500

5000

2500

1000

700

100

2500

1000

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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