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MPLAD15KP43AE3 PDF预览

MPLAD15KP43AE3

更新时间: 2024-11-06 04:36:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 290K
描述
Trans Voltage Suppressor Diode, 15000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

MPLAD15KP43AE3 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PSSO-G1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.59其他特性:HIGH RELIABILITY
最大击穿电压:52.8 V最小击穿电压:47.8 V
击穿电压标称值:50.3 V外壳连接:CATHODE
最大钳位电压:69.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PSSO-G1JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:15000 W
元件数量:1端子数量:1
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:2.5 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:43 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED

MPLAD15KP43AE3 数据手册

 浏览型号MPLAD15KP43AE3的Datasheet PDF文件第2页浏览型号MPLAD15KP43AE3的Datasheet PDF文件第3页浏览型号MPLAD15KP43AE3的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 15,000 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 7.0 to 200 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MPLAD15KP7.0A thru MPLAD15KP200CA, e3  
FEATURES  
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High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options  
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Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
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Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
Class 1,2,3,4: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
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o
o
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Class 2,3: MPLAD15KP7.0A to 200CA  
Class 4: MPLAD15KP5.0 to 54CA  
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Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):  
o
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Level 4: MPLAD15KP7.0A to 200CA  
Level 5: MPLAD15KP7.0A to 100CA  
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):  
Level 4: MPLAD15KP7.0A to 28CA  
o
MAXIMUM RATINGS  
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Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with  
impulse repetition rate (duty factor) of 0.05% or less  
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tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -55 °C to +150 °C  
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC  
board with recommended mounting pad (see page 2)  
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Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C  
if mounted on FR4 PC board as described for thermal resistance  
.
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Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01004 Rev C, November 2010  
High Reliability Product Group  
Page 1 of 4  

MPLAD15KP43AE3 替代型号

型号 品牌 替代类型 描述 数据表
MAPLAD15KP43AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 15000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, RO

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