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MPLAD15KP170CAE3

更新时间： 2024-11-15 06:47:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 290K
描述
Trans Voltage Suppressor Diode, 15000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

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中文翻译

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MPLAD15KP170CAE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PSSO-G1
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.58
其他特性：HIGH RELIABILITY最大击穿电压：209 V
最小击穿电压：189 V击穿电压标称值：199 V
外壳连接：CATHODE最大钳位电压：275 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PSSO-G1
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：15000 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：170 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MPLAD15KP170CAE3 数据手册

 浏览型号MPLAD15KP170CAE3的Datasheet PDF文件第2页浏览型号MPLAD15KP170CAE3的Datasheet PDF文件第3页浏览型号MPLAD15KP170CAE3的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 15,000 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 7.0 to 200 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MPLAD15KP7.0A thru MPLAD15KP200CA, e3  
FEATURES  
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options  
.
.
.
.
Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
Class 1,2,3,4: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
.
.
o
o
o
Class 2,3: MPLAD15KP7.0A to 200CA  
Class 4: MPLAD15KP5.0 to 54CA  
.
.
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):  
o
o
Level 4: MPLAD15KP7.0A to 200CA  
Level 5: MPLAD15KP7.0A to 100CA  
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):  
Level 4: MPLAD15KP7.0A to 28CA  
o
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with  
impulse repetition rate (duty factor) of 0.05% or less  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -55 °C to +150 °C  
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC  
board with recommended mounting pad (see page 2)  
.
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C  
if mounted on FR4 PC board as described for thermal resistance  
.
.
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01004 Rev C, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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 		Trans Voltage Suppressor Diode, 15000W, 180V V(RWM), Unidirectional, 1 Element, Silicon
MPLAD15KP180AE3TR MICROSEMI

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