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MPF6659RL1 PDF预览

MPF6659RL1

更新时间: 2024-01-29 18:09:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
34页 317K
描述
2000mA, 35V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AE, 3 PIN

MPF6659RL1 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.65
其他特性:EUROPEAN PART NUMBER配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:35 V最大漏极电流 (ID):2 A
最大漏源导通电阻:1.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
功耗环境最大值:2.5 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MPF6659RL1 数据手册

 浏览型号MPF6659RL1的Datasheet PDF文件第2页浏览型号MPF6659RL1的Datasheet PDF文件第3页浏览型号MPF6659RL1的Datasheet PDF文件第4页浏览型号MPF6659RL1的Datasheet PDF文件第5页浏览型号MPF6659RL1的Datasheet PDF文件第6页浏览型号MPF6659RL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
N–Channel — Enhancement  
3 DRAIN  
2
GATE  
1 SOURCE  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
DrainGate Voltage  
Symbol  
MPF6659 MPF6660 MPF6661  
Unit  
Vdc  
Vdc  
V
DS  
35  
35  
60  
60  
90  
90  
V
DG  
1
2
3
Gate–Source Voltage  
— Continuous  
— Non–repetitive (t 50 µs)  
V
±20  
±40  
Vdc  
Vpk  
GS  
CASE 29–05, STYLE 22  
TO–92 (TO–226AE)  
V
GSM  
p
Drain Current  
Adc  
(1)  
Continuous  
(2)  
I
2.0  
3.0  
D
Pulsed  
I
DM  
Total Device Dissipation  
P
D
@ T = 25°C  
2.5  
20  
Watts  
mW/°C  
C
Derate above 25°C  
Total Device Dissipation  
P
D
@ T = 25°C  
1.0  
8.0  
Watts  
mW/°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
I
10  
µAdc  
nAdc  
Vdc  
DSS  
(V  
DS  
= Maximum Rating, V = 0)  
GS  
Gate–Body Leakage Current  
(V = 15 Vdc, V = 0)  
I
100  
GSS  
GS  
Drain–Source Breakdown Voltage  
(V = 0, I = 10 µAdc)  
DS  
V
(BR)DSX  
MPF6659  
MPF6660  
MPF6661  
35  
60  
90  
GS  
D
(2)  
ON CHARACTERISTICS  
Gate Threshold Voltage  
V
0.8  
1.4  
2.0  
Vdc  
Vdc  
GS(Th)  
(V  
DS  
= V , I = 1.0 mAdc)  
GS  
D
Drain–Source On–Voltage  
V
DS(on)  
(V  
GS  
= 10 Vdc, I = 1.0 Adc)  
MPF6659  
MPF6660  
MPF6661  
1.8  
3.0  
4.0  
D
(V  
GS  
= 5.0 Vdc, I = 0.3 Adc)  
MPF6659  
MPF6660  
MPF6661  
0.8  
0.9  
0.9  
1.5  
1.5  
1.6  
D
1. The Power Dissipation of the package may result in a lower continuous drain current.  
2. Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
REV 2  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
4–93  

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