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MOC8204300 PDF预览

MOC8204300

更新时间: 2024-11-25 15:43:59
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飞兆/仙童 - FAIRCHILD /
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MOC8204300 数据手册

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January 2009  
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M  
High Voltage Phototransistor Optocouplers  
Features  
General Description  
High voltage:  
The 4N38M, H11DXM and MOC8204M are photo-  
transistor-type optically coupled optoisolators. A gallium  
arsenide infrared emitting diode is coupled with a high  
voltage NPN silicon phototransistor. The device is sup-  
plied in a standard plastic six-pin dual-in-line package.  
– MOC8204M, BV  
= 400V  
CER  
– H11D1M, H11D2M, BV  
= 300V  
CER  
– H11D3M, BV  
= 200V  
CER  
High isolation voltage:  
– 7500 V peak, 1 second  
AC  
Underwriters Laboratory (UL) recognized  
File # E90700, Volume 2  
IEC 60747-5-2 approved (ordering option V)  
Applications  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Appliance sensor systems  
Industrial controls  
Schematic  
Package Outlines  
ANODE  
CATHODE  
N/C  
1
6 BASE  
COLLECTOR  
2
3
5
4
EMITTER  
©2007 Fairchild Semiconductor Corporation  
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5  
www.fairchildsemi.com  

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