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MOC8204300W PDF预览

MOC8204300W

更新时间: 2024-11-25 14:53:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 输出元件光电
页数 文件大小 规格书
9页 226K
描述
Transistor Output Optocoupler, 1-Element, 5300V Isolation, DIP-6

MOC8204300W 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:DIP-6Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.75
Is Samacsys:N其他特性:VDE APPROVED
Coll-Emtr Bkdn Voltage-Min:400 V配置:SINGLE
当前传输比率-最小值:20%标称电流传输比:20%
最大暗电源:100 nA最大正向电流:0.06 A
最大正向电压:1.5 V最大绝缘电压:5300 V
JESD-609代码:e3安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.1 A
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER子类别:Optocoupler - Transistor Outputs
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

MOC8204300W 数据手册

 浏览型号MOC8204300W的Datasheet PDF文件第2页浏览型号MOC8204300W的Datasheet PDF文件第3页浏览型号MOC8204300W的Datasheet PDF文件第4页浏览型号MOC8204300W的Datasheet PDF文件第5页浏览型号MOC8204300W的Datasheet PDF文件第6页浏览型号MOC8204300W的Datasheet PDF文件第7页 
January 2009  
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M  
High Voltage Phototransistor Optocouplers  
Features  
General Description  
High voltage:  
The 4N38M, H11DXM and MOC8204M are photo-  
transistor-type optically coupled optoisolators. A gallium  
arsenide infrared emitting diode is coupled with a high  
voltage NPN silicon phototransistor. The device is sup-  
plied in a standard plastic six-pin dual-in-line package.  
– MOC8204M, BV  
= 400V  
CER  
– H11D1M, H11D2M, BV  
= 300V  
CER  
– H11D3M, BV  
= 200V  
CER  
High isolation voltage:  
– 7500 V peak, 1 second  
AC  
Underwriters Laboratory (UL) recognized  
File # E90700, Volume 2  
IEC 60747-5-2 approved (ordering option V)  
Applications  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Appliance sensor systems  
Industrial controls  
Schematic  
Package Outlines  
ANODE  
CATHODE  
N/C  
1
6 BASE  
COLLECTOR  
2
3
5
4
EMITTER  
©2007 Fairchild Semiconductor Corporation  
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5  
www.fairchildsemi.com  

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