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MMSZ13ET3G PDF预览

MMSZ13ET3G

更新时间: 2024-11-28 13:11:43
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
6页 82K
描述
DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

MMSZ13ET3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.55配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W标称参考电压:13 V
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

MMSZ13ET3G 数据手册

 浏览型号MMSZ13ET3G的Datasheet PDF文件第2页浏览型号MMSZ13ET3G的Datasheet PDF文件第3页浏览型号MMSZ13ET3G的Datasheet PDF文件第4页浏览型号MMSZ13ET3G的Datasheet PDF文件第5页浏览型号MMSZ13ET3G的Datasheet PDF文件第6页 
MMSZ2V4ET1 Series  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Specification Features  
500 mW Rating on FR−4 or FR−5 Board  
Wide Zener Reverse Voltage Range − 2.4 V to 56 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power − 225 W (8 X 20 ms)  
1
2
Cathode  
Anode  
2
Mechanical Characteristics  
1
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
SOD−123  
CASE 425  
STYLE 1  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MARKING DIAGRAM  
xx M  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
Watts  
xx = Specific Device Code  
@ T 25°C  
L
M
= Date Code  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 75°C  
500  
6.7  
mW  
mW/°C  
L
Derated above 75°C  
ORDERING INFORMATION  
Thermal Resistance −  
Junction−to−Ambient (Note 3)  
R
340  
°C/W  
°C/W  
°C  
q
JA  
Device  
Package  
Shipping  
Thermal Resistance −  
Junction−to−Lead (Note 3)  
R
q
JL  
150  
MMSZxxxET1  
MMSZxxxET3  
SOD−123  
3000/Tape & Reel  
SOD−123 10,000/Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to  
+150  
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 11  
2. FR−5 = 3.5 X 1.5 inches, using the On minimum recommended footprint as  
shown in Figure 12.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
3. Thermal Resistance measurement obtained via infrared Scan Method  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 1  
MMSZ2V4ET1/D  
 

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