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MMS9013H

更新时间: 2024-01-26 02:10:16
品牌 Logo 应用领域
商朗 - LUNSURE /
页数 文件大小 规格书
1页 42K
描述
Transistor

MMS9013H 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

MMS9013H 数据手册

  
Shanghai Lunsure Electronic  
Technology Co.,Ltd  
Tel:0086-21-37185008  
Fax:0086-21-57152769  
MMS9013  
Features  
·
·
·
·
·
·
SOT-23 Plastic-Encapsulate Transistors  
Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
Collector-current 0.5A  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: J3  
SOT-23  
A
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
B
C
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
40  
25  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
C
F
E
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
H
G
J
I
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
CBO  
(VCB=40Vdc, I =0)  
E
K
I
Collector Cutoff Current  
CEO  
(VCE=20Vdc, I =0)  
DIMENSIONS  
MM  
B
IEBO  
Emitter Cutoff Current  
INCHES  
MIN  
(VEB=5.0Vdc, I =0)  
C
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
120  
40  
---  
350  
---  
---  
---  
(I =50mAdc, VCE=1.0Vdc)  
C
hFE(2)  
DC Current Gain  
F
G
H
J
(I =500mAdc, VCE=1.0Vdc)  
C
VCE(sat)  
VBE(sat)  
VEB  
Collector-Emitter Saturation Voltage  
0.6  
1.2  
1.4  
Vdc  
Vdc  
Vdc  
.085  
.37  
(I =500mAdc, IB=50mAdc)  
C
K
Base-Emitter Saturation Voltage  
---  
Suggested Solder  
Pad Layout  
(I =500mAdc, IB=50mAdc)  
C
Base- Emitter Voltage  
(IE=100mAdc)  
---  
.031  
.800  
SMALL-SIGNAL CHARACTERISTICS  
.035  
.900  
fT  
Transistor Frequency  
150  
---  
MHz  
(I =20mAdc, VCE=6.0Vdc, f=30MHz)  
C
.079  
2.000  
inches  
mm  
CLASSIFICATION OF HFE (1)  
Rank  
L
H
Range  
120-200  
200-350  
.037  
.950  
.037  
.950  
www.cnelectr.com  

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