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MMS9013
Features
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SOT-23 Plastic-Encapsulate Transistors
Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
NPN Silicon
Plastic-Encapsulate
Transistor
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Marking Code: J3
SOT-23
A
D
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
B
C
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
40
25
5.0
---
---
---
---
---
Vdc
Vdc
(I =100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
C
F
E
(I =0.1mAdc, IB=0)
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =100uAdc, IC=0)
E
H
G
J
I
Collector Cutoff Current
0.1
0.1
0.1
uAdc
uAdc
uAdc
CBO
(VCB=40Vdc, I =0)
E
K
I
Collector Cutoff Current
CEO
(VCE=20Vdc, I =0)
DIMENSIONS
MM
B
IEBO
Emitter Cutoff Current
INCHES
MIN
(VEB=5.0Vdc, I =0)
C
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
ON CHARACTERISTICS
hFE(1)
DC Current Gain
120
40
---
350
---
---
---
(I =50mAdc, VCE=1.0Vdc)
C
hFE(2)
DC Current Gain
F
G
H
J
(I =500mAdc, VCE=1.0Vdc)
C
VCE(sat)
VBE(sat)
VEB
Collector-Emitter Saturation Voltage
0.6
1.2
1.4
Vdc
Vdc
Vdc
.085
.37
(I =500mAdc, IB=50mAdc)
C
K
Base-Emitter Saturation Voltage
---
Suggested Solder
Pad Layout
(I =500mAdc, IB=50mAdc)
C
Base- Emitter Voltage
(IE=100mAdc)
---
.031
.800
SMALL-SIGNAL CHARACTERISTICS
.035
.900
fT
Transistor Frequency
150
---
MHz
(I =20mAdc, VCE=6.0Vdc, f=30MHz)
C
.079
2.000
inches
mm
CLASSIFICATION OF HFE (1)
Rank
L
H
Range
120-200
200-350
.037
.950
.037
.950
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