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MMRF5014H-200MHZ PDF预览

MMRF5014H-200MHZ

更新时间： 2024-11-02 14:43:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
18页 770K
描述
RF Power Field-Effect Transistor

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中文翻译

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MMRF5014H-200MHZ 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.67峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MMRF5014H-200MHZ 数据手册

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Document Number: MMRF5014H  
Rev. 3, 05/2018  
NXP Semiconductors  
Technical Data  
RF Power GaN Transistor  
MMRF5014H  
This 125 W CW RF power transistor is optimized for wideband operation up to  
2700 MHz and includes input matching for extended bandwidth performance.  
With its high gain and high ruggedness, this device is ideally suited for CW,  
pulse and wideband RF applications.  
1–2700 MHz, 125 W CW, 50 V  
WIDEBAND  
RF POWER GaN TRANSISTOR  
This part is characterized and performance is guaranteed for applications  
operating in the 1–2700 MHz band. There is no guarantee of performance when  
this part is used in applications designed outside of these frequencies.  
Typical Narrowband Performance: V = 50 Vdc, I = 350 mA, T = 25C  
DD  
DQ  
A
P
(W)  
Frequency  
(MHz)  
G
D
out  
ps  
Signal Type  
(dB)  
16.0  
18.0  
(%)  
64.2  
66.8  
(1)  
2500  
125 CW  
CW  
(1)  
2500  
125 Peak  
Pulse  
(100 sec,  
20% Duty Cycle)  
NI--360H--2SB  
Typical Wideband Performance: V = 50 Vdc, T = 25C  
DD  
A
(2)  
(2)  
P
(W)  
Frequency  
(MHz)  
G
out  
ps  
D
Signal Type  
(dB)  
(%)  
(3)  
200–2500  
100 CW  
12.0  
40.0  
CW  
(4)  
1300–1900  
125 CW  
14.5  
45.0  
CW  
Gate  
Drain  
1
2
Load Mismatch/Ruggedness  
Frequency  
P
(W)  
Test  
Voltage  
in  
Signal Type  
VSWR  
(MHz)  
Result  
(Top View)  
(1)  
2500  
Pulse  
(100 sec,  
20% Duty Cycle)  
> 20:1 at  
All Phase  
Angles  
5.0 Peak  
(3 dB  
Overdrive)  
50  
No Device  
Degradation  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
1. Measured in 2500 MHz narrowband test circuit.  
2. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
3. Measured in 200–2500 MHz broadband reference circuit.  
4. Measured in 1300–1900 MHz broadband reference circuit.  
Features  
Advanced GaN on SiC, offering high power density  
Decade bandwidth performance  
Low thermal resistance  
Input matched for extended wideband performance  
High ruggedness: > 20:1 VSWR  
Typical Applications  
Ideal for military end--use applications,  
including the following:  
Also suitable for commercial applications,  
including the following:  
– Narrowband and multi--octave  
wideband amplifiers  
– Public mobile radios, including  
emergency service radios  
– Radar  
– Industrial, scientific and medical  
– Wideband laboratory amplifiers  
– Wireless cellular infrastructure  
– Jammers  
– EMC testing  
2015, 2017–2018 NXP B.V.  
1234567...18

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