Datasheet > MMDTX441DW

MMDTX441DW

更新时间： 2024-11-10 14:55:19

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	280K
描述
数字三极管

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MMDTX441DW 数据手册

MMDTX441DW

Complementary NPN/PNP Silicon Epitaxial Planar Digital Transistor

Features

• Transistors with different polarity and built-in bias

resistors R1(47 KΩ) and R2(47 KΩ)

TR2

TR1

• Simplification of circuit design

• Reduces number of components and board space

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-363 Plastic Package

Applications

• For switching and interface circuit and drivecircuit applications

Absolute Maximum Ratings (T_a= 25℃) (TR1)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

V_I

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Input Voltage

+ 40 / - 10

100

Collector Current

I_C

Absolute Maximum Ratings (T_a= 25℃) (TR2)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-V_I

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Input Voltage

+ 10 / - 40

100

Collector Current

-I_C

Absolute Maximum Ratings (T_a= 25℃) (TR1 and TR2)

Parameter

Symbol

P_tot

Value

200

Unit

Total Power Dissipation

Thermal Resistance Junction to Ambient ¹⁾

Operating Junction Temperature

Storage Temperature Range

625

℃/W

℃

R_θJA

T_j

150

T_stg

- 65 to + 150

℃

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 03/03/2023 Rev: 04

12 3 4 5

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