Datasheet > MMD90R1K4PRH

MMD90R1K4PRH

更新时间： 2024-05-23 22:23:49

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1542K
描述
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MMD90R1K4PRH 数据手册

MMD90R1K4P Datasheet

MMD90R1K4P

900V 1.49Ω N-channel MOSFET

 Description

MMD90R1K4P is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_{j, max}

R_{DS(on), max}

V_{GS(th), typ}

I_D

Value

Unit

950

1.49

Ω

5.0

13.6

Q_{g, typ}

 Features

 Low power loss by high speed switching and low on-resistance

 100% avalanche tested

 Green package – Pb-free, Halogen-free

 Applications

 PFC power supply stages

 Switching applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD90R1K4PRH

90R1K4P

-55 ~ 150^oC

TO-252

Reel

Compliant

Jun. 2021. Revision 1.2

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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