Datasheet > MMDB35-28X

MMDB35-28X

更新时间： 2024-11-19 14:48:23

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描述
Silicon Step Recovery Diodes

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数据手册

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MMDB35-28X 数据手册

Silicon Step Recovery Diodes

MMDx & SMMDx Series

Rev. V5

Features

•

Output Combs to 40+ GHz

Transition Times down to 35 ps

Screening per MIL-PRF-19500 and MIL-PRF-

38534 available

Plastic SMT w/leads

Description

The diodes feature fully passivated, true mesa

construction for sharp transitions and improved

stability. The beam lead SRDs have the industry’s

fastest transition times for millimeter wave

multiplication and picoseconds pulse forming.

Chip & Beam Lead Electrical Specifications: T_A= 25°C

Voltage

Breakdown

(V_B)

Junction

Capacitance

(C_J)

Transition

Time

Frequency

Theta

Lifetime

(t)

Cutoff

(θ_JC)

(t_t)

(F_CO)

Model

GHz

Typ.

°C/W

Max.

Min.

Max.

Min.

Typ.

Max.

Chip

MMD805-C12

MMD810-C12

MMD820-C12

MMD830-C11

MMD832-C11

MMD835-C11

MMD837-C11

MMD840-C11

Beam Lead

2.5

3.5

100

250

200

300

250

100

130

200

390

700

660

800

1300

880

1.5

1.0

0.5

0.4

0.3

0.2

2.5

1.7

1.0

0.8

0.7

0.4

MMDB30-B11

MMDB35-B11

MMDB45-B11

0.15

0.13

0.11

0.25

0.20

530

482

410

600

Test Conditions:

V_B: I_R= 10 µA

C_J: V_R= 6 V, 1 MHz

t: I_F= 10 mA, I_R= 6 mA @ 50% Recovery

t_t: for Chip: I_F= 10 mA, V_R= 10 V

t_t: for Beam Lead: I_F= 3 mA, V_R= 7 V

F_CO: 1/2πR_S

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012557

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