Datasheet > MMBZ6V2AT-Q

MMBZ6V2AT-Q

更新时间： 2024-04-09 19:01:10

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	207K
描述
Low capacitance unidirectional double ESD protection diodeProduction

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中文翻译

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MMBZ6V2AT-Q 数据手册

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MMBZ6V2AT-Q

Low capacitance unidirectional double ESD protection diode

8. Limiting values

Table 5. Limiting values

In accordance with the Aboluste Maximum Rating System (IEC 60134)

Symbol

P_PPM

Parameter

Conditions

Min

Max

Unit

rated peak pulse power t_p= 10/1000 µs

rated peak pulse current t_p= 8/20 µs

t_p= 10/1000 µs

[1]

[2]

[1]

I_PPM

8.8

T_j

junction temperature

150

°C

T_amb

T_stg

ambient temperature

-55

-65

storage temperature

ESD maximum ratings

V_ESDelectrostatic discharge

voltage

IEC 61000-4-2; contact discharge

IEC 61000-4-2; air discharge

[3]

[1] In accordance with IEC 61643‐321 (10/1000 μs current waveform).

[2] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[3] Device stressed with ten non-repetitive ESD pulses.

001aaa630

120

100 %

90 %

100 % I ; 8 µs

(%)

-t

50 % I ; 20 µs

10 %

t = 0.6 ns to 1 ns

30 ns

60 ns

t (µs)

001aaa631

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

[2]

417

K/W

R_th(j-sp)

thermal resistance from

junction to solder point

100

K/W

[1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.

[2] Soldering points at pin 1 and 2.

MMBZ6V2AT-Q

All information provided in this document is subject to legal disclaimers.

Product data sheet

12 February 2024

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中文翻译

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