Datasheet > MMBZ6V2AT-Q

MMBZ6V2AT-Q

更新时间： 2024-04-09 19:01:10

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	207K
描述
Low capacitance unidirectional double ESD protection diodeProduction

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MMBZ6V2AT-Q

Low capacitance unidirectional double ESD protection diode

10. Characteristics

Table 7. Characteristics

Symbol

V_F

Parameter

Conditions

Min

Typ

0.7

Max

Unit

forward voltage

I_F= 1 mA; T_amb= 25 °C

T_amb= 25 °C

V_RWM

reverse standoff

voltage

V_BR

I_RM

C_d

breakdown voltage

I_R= 1 mA; T_amb= 25 °C

5.7

6.2

6.7

200

106

reverse leakage current V_RWM= 3 V; T_amb= 25 °C

diode capacitance

clamping voltage

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

2.2

V_CL

S_Z

I_PPM= 8.8 A; t_p= 8/20 µs; T_amb= 25 °C [1]

temperature coefficient I_Z= 1 mA

mV/K

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

aaa-037538

100

(pF)

- V

RWM

- I

P-N

- I

(V)

- I

PPM

006aab324

f = 1 MHz; T_amb= 25 °C

Fig. 3. V-I characteristics for a unidirectional ESD

protection diode

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

aaa-037539

(A)

(V)

IEC 61000-4-5; t_p= 8/20 μs; positive pulse

Fig. 5. Dynamic resistance with positive clamping; typical values

MMBZ6V2AT-Q

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Product data sheet

12 February 2024

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