MMBZ5221ELT1 Series
Preferred Device
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
http://onsemi.com
3
1
Features
Cathode
Anode
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Voltage Range − 2.4 V to 91 V
MARKING
DIAGRAM
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
3
SOT−23
CASE 318
STYLE 8
Bxx M G
• Pb−Free Packages are Available
G
1
2
1
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
Bxx = Device Code
xx
M
G
= (Refer to page 2)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
ORDERING INFORMATION
Peak Power Dissipation @ 20 ms (Note 1)
P
225
W
pk
†
Device
MMBZ52xxELT1
Package
Shipping
@ T ≤ 25°C
L
SOT−23 3000/Tape & Reel
Total Power Dissipation on FR−5 Board,
P
D
(Note 2) @ T = 25°C
Derated above 25°C
225
1.8
mW
mW/°C
A
MMBZ52xxELT1G SOT−23 3000/Tape & Reel
(Pb−Free)
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
MMBZ52xxELT3
SOT−23 10000/Tape & Reel
Total Power Dissipation on Alumina
P
D
MMBZ52xxELT3G SOT−23 10000/Tape & Reel
(Pb−Free)
Substrate, (Note 3) @ T = 25°C
300
2.4
mW
mW/°C
A
Derated above 25°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
R
417
°C/W
°C
q
JA
T , T
J
−65 to
+150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 6
MMBZ5221ELT1/D