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MMBZ5252-V-G-08 PDF预览

MMBZ5252-V-G-08

更新时间: 2024-11-12 19:30:43
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
4页 82K
描述
DIODE 24 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode

MMBZ5252-V-G-08 技术参数

生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.62Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.225 W
标称参考电压:24 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL工作测试电流:5.2 mA
Base Number Matches:1

MMBZ5252-V-G-08 数据手册

 浏览型号MMBZ5252-V-G-08的Datasheet PDF文件第2页浏览型号MMBZ5252-V-G-08的Datasheet PDF文件第3页浏览型号MMBZ5252-V-G-08的Datasheet PDF文件第4页 
MMBZ5225-V-G to MMBZ5267-V-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Zener Diodes  
FEATURES  
• Silicon planar power Zener diodes.  
3
• Standard Zener voltage tolerance is 5 ꢀ with  
a “B” suffix (e.g.: MMBZ5225B-V-G), suffix “C”  
is 2 ꢀ tolerance  
• High temperature soldering guaranteed:  
260 °C/4 x 10 s at terminals  
1
2
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Note  
PRIMARY CHARACTERISTICS  
** Please see document “Vishay Material Category Policy”:  
www.vishay.com/doc?99902  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
UNIT  
V
3 to 75  
1.7 to 20  
mA  
Thermal equilibrium  
Single  
ORDERING INFORMATION  
MINIMUM ORDER  
TAPED UNITS PER REEL  
DEVICE NAME  
ORDERING CODE  
QUANTITY  
MMBZ5225-V-G to  
MMBZ5267-V-Gseries-18  
10 000 (8 mm tape on 13"  
MMBZ5225-V-G to MMBZ5267-V-G  
MMBZ5225-V-G to MMBZ5267-V-G  
10 000/box  
reel)  
MMBZ5225-V to  
MMBZ5267-V-G-series-08  
3000 (8 mm tape on 7" reel)  
15 000/box  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
8.1 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
SOT-23  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
mW  
On FR - 5 board using recommended solder pad  
layout  
Ptot  
225  
300  
Power dissipation  
On alumina substrate  
Ptot  
mW  
Zener current  
See table “Caharacteristics”  
On FR - 5 board using recommended solder pad  
layout  
Junction to ambient air  
RthJA  
556  
K/W  
Tj  
Junction temperature, maximum  
Storage temperature range  
150  
°C  
°C  
Tstg  
- 65 to + 175  
Rev. 1.2, 24-Nov-11  
Document Number: 85183  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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