Datasheet > MMBZ5251BW

MMBZ5251BW

更新时间： 2024-11-12 12:33:07

品牌	Logo	应用领域
TYSEMI		二极管测试
页数	文件大小	规格书
3页	165K
描述
Planar Die Construction

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中文翻译

获取价格

数据手册

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MMBZ5251BW 数据手册

Product specification

MMBZ5251BW

Features

Planar Die Construction

General Purpose, Medium Current

Ideally Suited for Automated Assembly Processes

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^F

Rating

0.9

Unit

Forward Voltage

@ I^F= 10mA

Power Dissipation *1

P^d

200

Thermal Resistance, Junction to Ambient Air *1

Operating and Storage Temperature Range

625

T^j, T^STG

-65 to +150

*1. Part mounted on FR-4 PC board with recommended pad layout

Electrical Characteristics @TA=25 unless otherwise specified

Maximum ZenerImpedance

Maximum Reverse

Leakage Current *1

Zener Voltage Range *1

Type Number

Z^ZK@ I^ZK=

Z^ZT@ I^ZT

Vz @I^ZT

I^ZT

I^R

@ V^R

0.25mA

Nom (V)

Min (V)

20.9

Max (V)

23.1

5.6

MMBZ5251BW

600

0.1

*1. Short duration test pulse used to minimize self-heating effect.

*2. f = 1KHz.

Marking

KK1

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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与MMBZ5251BW相关器件

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MMBZ5251BW-13	DIODES	获取价格	Zener Diode, 22V V(Z), 5%, 0.2W, Silicon, Unidirectional, ULTRA SMALL, PLASTIC PACKAGE-3
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MMBZ5251BW-T	MCC	获取价格	暂无描述
MMBZ5251BW-T1	WTE	获取价格	200mW SURFACE MOUNT ZENER DIODE
MMBZ5251BW-T1-LF	WTE	获取价格	暂无描述
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