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MMBZ5251B PDF预览

MMBZ5251B

更新时间: 2024-11-12 20:12:59
品牌 Logo 应用领域
鲁光 - LGE 测试二极管
页数 文件大小 规格书
4页 2048K
描述
暂无描述

MMBZ5251B 技术参数

Case Style:SOT-23Pd(W):0.225
VZ(Min):20.90_VZ(Nom):22.0_
VZ(Max):23.10_IZT(mA):5.6_
IR(uA):0.10_VR(V):17.0_
class:Diodes

MMBZ5251B 数据手册

 浏览型号MMBZ5251B的Datasheet PDF文件第2页浏览型号MMBZ5251B的Datasheet PDF文件第3页浏览型号MMBZ5251B的Datasheet PDF文件第4页 
MMBZ5221B-5259B  
350mW Surface Mount Zener Diodes  
SOT-23  
Features  
—
—
—
—
Planar Die Construction.  
350mw Power Dissipation.  
General purpose, medium current.  
Ideally Suited For Automated Assembly Prcesses.  
Applications  
Dimensions in inches and (millimeters)  
—
350Mw Surface mount zener diode  
Ordering Information  
Type No.  
Marking  
Package Code  
SOT-23  
MMBZ5221B-MMBZ5259B  
See Table on page2  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
V
Forward Valtage@IF=10mA  
VF  
0.9  
Power Dissipation  
Pd  
350  
mW  
/W  
Thermal Resistance, Junction to Ambient Air  
RθjA  
357  
Operating and Storage Temperature Range  
TjTstg  
-65 to+150  
Notes: 1. Valid provided that device terminals are kept at ambient temperature.  
2. Tested with pulses, TP1.0ms.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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