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MMBZ5251B PDF预览

MMBZ5251B

更新时间: 2024-11-12 12:33:07
品牌 Logo 应用领域
TYSEMI 二极管测试
页数 文件大小 规格书
3页 175K
描述
Planar Die Construction

MMBZ5251B 数据手册

 浏览型号MMBZ5251B的Datasheet PDF文件第2页浏览型号MMBZ5251B的Datasheet PDF文件第3页 
Product specification  
MMBZ5251B  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
Planar Die Construction  
General Purpose, Medium Current  
Ideally Suited for Automated Assembly Processes  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VF  
Rating  
0.9  
Unit  
V
Forward Voltage  
@ IF = 10mA  
Power Dissipation *1  
Pd  
350  
mW  
Thermal Resistance, Junction to Ambient Air *1  
Operating and Storage Temperature Range  
R
JA  
357  
/W  
Tj, TSTG  
-65 to +150  
*1. Part mounted on FR-4 PC board with recommended pad layout  
Electrical Characteristics @TA=25 unless otherwise specified  
Maximum ZenerImpedance  
*2  
Maximum Reverse  
Leakage Current *1  
Zener Voltage Range *1  
Type Number  
ZZK @ IZK=  
ZZT @ IZT  
Vz @IZT  
IZT  
IR  
@ VR  
0.25mA  
Nom (V)  
22  
Min (V)  
20.9  
Max (V)  
23.1  
mA  
5.6  
uA  
V
MMBZ5251B  
29  
600  
0.1  
17  
*1. Short duration test pulse used to minimize self-heating effect.  
*2. f = 1KHz.  
Marking  
Marking  
KK1  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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