Datasheet > MMBZ5242ELT1T3G

MMBZ5242ELT1T3G

更新时间： 2024-11-12 12:18:51

品牌	Logo	应用领域
安森美 - ONSEMI		稳压器
页数	文件大小	规格书
6页	154K
描述
Zener Voltage Regulators

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBZ5242ELT1T3G 数据手册

MMBZ52xxELT1G Series,

SZMMBZ52xxELT1G Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

http://onsemi.com

Cathode

Anode

Features

• 225 mW Rating on FR−4 or FR−5 Board

• Zener Voltage Range − 2.4 V to 91 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Peak Power − 225 W (8 x 20 ms)

MARKING

DIAGRAM

SOT−23

CASE 318

STYLE 8

Bxx M G

• AEC−Q101 Qualified and PPAP Capable

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• Pb−Free Packages are Available

Bxx = Device Code

= (Refer to page 2)

= Date Code*

= Pb−Free Package

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

ORDERING INFORMATION

MAXIMUM RATINGS

†

Device

MMBZ52xxELT1G

Package

Shipping

Rating

Symbol

Max

Unit

SOT−23

(Pb−Free)

3000 / Tape &

Reel

Peak Power Dissipation @ 20 ms (Note 1)

225

@ T ≤ 25°C

SZMMBZ52xxELT1G SOT−23

(Pb−Free)

3000 / Tape &

Reel

Total Power Dissipation on FR−5 Board,

(Note 2) @ T = 25°C

Derated above 25°C

225

1.8

mW/°C

MMBZ52xxELT3G

SOT−23

10000 / Tape &

Reel

(Pb−Free)

Thermal Resistance, Junction−to−Ambient

556

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Total Power Dissipation on Alumina

Substrate, (Note 3) @ T = 25°C

300

2.4

mW/°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

417

°C/W

°C

T , T

−65 to

stg

+150

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Nonrepetitive current pulse per Figure 9.

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

Publication Order Number:

December, 2011 − Rev. 7

MMBZ5221ELT1/D

12 3 4 5 6

中文翻译

下载PDF

与MMBZ5242ELT1T3G相关器件

型号	品牌	获取价格	描述	数据表
MMBZ5242ELT3	ONSEMI	获取价格	Zener Voltage Regulators
MMBZ5242ELT3G	ONSEMI	获取价格	Zener Voltage Regulators
MMBZ5242-G	VISHAY	获取价格	Silicon planar power Zener diodes
MMBZ5242-V	VISHAY	获取价格	Small Signal Zener Diodes
MMBZ5242-V-G	VISHAY	获取价格	Small Signal Zener Diodes
MMBZ5242-V-G-08	VISHAY	获取价格	DIODE 12 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Vol
MMBZ5242-V-G-18	VISHAY	获取价格	DIODE 12 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Vol
MMBZ5242-V-G-8	VISHAY	获取价格	DIODE 12 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Vol
MMBZ5242-V-GS08	VISHAY	获取价格	DIODE 12 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLAS
MMBZ5242-V-GS18	VISHAY	获取价格	DIODE 12 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLAS

与MMBZ5242ELT1T3G相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBZ5242ELT1T3G

MMBZ5242ELT1T3G 数据手册

与MMBZ5242ELT1T3G相关器件

与MMBZ5242ELT1T3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBZ5242ELT1T3G

MMBZ5242ELT1T3G 数据手册

与MMBZ5242ELT1T3G相关器件

与MMBZ5242ELT1T3G相关文章

您还可以找

您在本页遇到什么问题？