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MMBT4126LT3G PDF预览

MMBT4126LT3G

更新时间: 2024-09-25 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI PC光电二极管小信号双极晶体管
页数 文件大小 规格书
5页 147K
描述
PNP 双极晶体管

MMBT4126LT3G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:5 weeks
风险等级:1.55Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:251183
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08 ISSUE AR_2
Samacsys Released Date:2018-02-13 14:36:03Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

MMBT4126LT3G 数据手册

 浏览型号MMBT4126LT3G的Datasheet PDF文件第2页浏览型号MMBT4126LT3G的Datasheet PDF文件第3页浏览型号MMBT4126LT3G的Datasheet PDF文件第4页浏览型号MMBT4126LT3G的Datasheet PDF文件第5页 
MMBT4126LT1G  
General Purpose Transistor  
PNP Silicon  
Features  
http://onsemi.com  
Moisture Sensitivity Level: 1  
ESD Rating: Human Body Model: > 4000 V  
Machine Model: > 400 V  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
MAXIMUM RATINGS  
2
EMITTER  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
25  
25  
4  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
CBO  
V
3
V
EBO  
Collector CurrentContinuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
200  
mAdc  
1
C
2
SOT23  
CASE 318  
STYLE 6  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
D
(Note 1) @T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
(Note 1)  
R
q
JA  
556  
°C/W  
MARKING DIAGRAM  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) @T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
C3 M G  
G
Thermal Resistance, JunctiontoAmbient  
(Note 2)  
R
q
JA  
417  
°C/W  
Junction and Storage Temperature Range T , T  
55 to +150  
°C  
J
stg  
C3 = Device Code  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
M
= Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT4126LT1G SOT23  
(PbFree)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 2  
MMBT4126LT1/D  
 

MMBT4126LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT4126LT1G ONSEMI

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