Datasheet > MMBT4140W

MMBT4140W

更新时间： 2024-11-13 14:55:03

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	263K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT4140W 数据手册

MMBT4140W

NPN Silicon General Purpose Transistor

Features

• Low collector-emitter saturation voltage

• Low collector-emitter saturation voltage, V_CE(SAT)

• Ultra-small surface mount package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

Power Dissipation ¹⁾

I_CM

P_D

300

℃

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 150

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

417

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 11/01/2023 Rev: 02

12 3 4 5

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