Datasheet > MMBT3904_08

MMBT3904_08

更新时间： 2024-11-30 11:56:39

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
5页	109K
描述
NPN General Purpose Amplifier

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中文翻译

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数据手册

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MMBT3904_08 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT3904

Micro Commercial Components

Features

•

Capable of 350mWatts of Power Dissipation and 200mA Ic.

xꢀ Operating and Storage Junction Temperatures: -55ć to 150ć

NPN General

Purpose Amplifier

xꢀ Surface Mount SOT-23 Package

•

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

Marking:1AM

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10µAdc, I_C=0)

Collector Cutoff Current

(V_CB=30Vdc, V_BE=3.0Vdc)

Collector Cutoff Current

(V_CE=30Vdc, V_BE=3.0Vdc)

Vdc

6.0

Vdc

nAdc

I_CEX

ON CHARACTERISTICS

h_FE

DC Current Gain*

DIMENSIONS

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=50mAdc, V_CE=1.0Vdc)

(I_C=100mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

100

INCHES

MIN

300

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

V_CE(sat)

0.2

0.3

Vdc

V_BE(sat)

0.65

300

0.85

0.95

.085

.37

SMALL-SIGNAL CHARACTERISTICS

Suggested Solder

Pad Layout

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=5.0Vdec, I_E=0, f=1.0MHz)

Input Capacitance

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

Noise Figure

(I_C=100µAdc, V_CE=5.0Vdc, R_S=1.0kΩ

f=10Hz to 15.7kHz)

MHz

C_obo

C_ibo

.031

.800

4.0

8.0

5.0

.035

.900

.079

2.000

inches

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, V_BE=0.5Vdc

I_C=10mAdc, I_B1=1.0mAdc)

(V_CC=3.0Vdc, I_C=10mAdc

I_B1=I_B2=1.0mAdc)

200

.037

.950

t_r

t_s

t_f

.037

.950

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

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Revision: 5

2008/01/01

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与MMBT3904_08相关器件

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MMBT3904_1	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3904_10	TSC	获取价格	300mW, NPN Small Signal Transistor
MMBT3904_10	DIOTEC	获取价格	Surface Mount Si-Epi-Planar Switching Transistors
MMBT3904_11	TSC	获取价格	300mW, NPN Small Signal Transistor
MMBT3904_11	MCC	获取价格	NPN General Purpose Amplifier
MMBT3904_11	UTC	获取价格	GENERAL PURPOSE APPLIATION
MMBT3904_14	TSC	获取价格	300mW, NPN Small Signal Transistor
MMBT3904_15	KEXIN	获取价格	NPN Transistors
MMBT3904-13-F	DIODES	获取价格	40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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