生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 最大集电极电流 (IC): | 0.8 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT3702S62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon |
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MMBT3702S62Z | TI |
获取价格 |
PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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MMBT3703 | TI |
获取价格 |
MMBT3703 |
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MMBT3820 | MCC |
获取价格 |
Tape: 3K/Reel,120K/Ctn; |
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MMBT3820A | SWST |
获取价格 |
小信号晶体管 |
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MMBT3903 | SAMSUNG |
获取价格 |
NPN (GENERAL PURPOSE TRANSISTOR) |
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MMBT3903 | TI |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,200MA I(C),SOT-23 |
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MMBT3903L | MOTOROLA |
获取价格 |
Transistor |
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MMBT3904 | DAYA |
获取价格 |
SOT-23 Plastic-Encapsulate Transistors |
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MMBT3904 | SECOS |
获取价格 |
200 mA, 40 V NPN Plastic Encapsulated Transistor |
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