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MMBT2222A_10 PDF预览

MMBT2222A_10

更新时间: 2024-11-20 11:52:35
品牌 Logo 应用领域
美微科 - MCC 放大器
页数 文件大小 规格书
4页 114K
描述
NPN General Purpose Amplifier

MMBT2222A_10 数据手册

 浏览型号MMBT2222A_10的Datasheet PDF文件第2页浏览型号MMBT2222A_10的Datasheet PDF文件第3页浏览型号MMBT2222A_10的Datasheet PDF文件第4页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMBT2222A  
Micro Commercial Components  
Features  
Surface Mount SOT-23 Package  
Capable of 350mWatts of Power Dissipation, IC=600mA  
NPN General  
Purpose Amplifier  
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Case Material:Molded Plastic. UL Flammability  
Classificatio Rating 94-0 and MSL Rating 1  
x
Marking:1P  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
SOT-23  
A
Symbol  
Parameter  
Min  
Max  
Units  
D
OFF CHARACTERISTICS  
C
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICEX  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10µAdc, IC=0)  
Collector Cutoff Current  
40  
75  
Vdc  
Vdc  
B
C
E
B
6.0  
Vdc  
F
E
10  
nAdc  
(VCE=60Vdc, VBE=3.0Vdc)  
ON CHARACTERISTICS  
H
G
J
hFE  
DC Current Gain*  
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=1.0Vdc)  
(IC=500mAdc, VCE=10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
35  
50  
75  
100  
50  
40  
K
DIMENSIONS  
MM  
300  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
VCE(sat)  
0.3  
1.0  
Vdc  
Vdc  
F
VBE(sat)  
G
H
J
0.6  
1.2  
2.0  
.085  
.37  
K
SMALL-SIGNAL CHARACTERISTICS  
Suggested Solder  
Pad Layout  
fT  
Current Gain-Bandwidth Product  
(IC=20mAdc, VCE=20Vdc, f=100MHz)  
300  
MHz  
pF  
Cobo  
Cibo  
NF  
Output Capacitance  
(VCB=10Vdec, IE=0, f=1.0MHz)  
Input Capacitance  
(VBE=0.5Vdc, IC=0, f=1.0MHz)  
Noise Figure  
.031  
.800  
8.0  
25  
.035  
.900  
pF  
.079  
2.000  
inches  
mm  
4.0  
dB  
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ  
f=1.0kHz)  
SWITCHING CHARACTERISTICS  
td  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=30Vdc, VBE=0.5Vdc  
IC=150mAdc, IB1=15mAdc)  
(VCC=30Vdc, IC=150mAdc  
IB1=IB2=15mAdc)  
10  
25  
225  
60  
ns  
ns  
ns  
ns  
.037  
.950  
tr  
ts  
tf  
.037  
.950  
*Pulse Width 300µs, Duty Cycle2.0%  
www.mccsemi.com  
1 of 4  
Revision: 8  
2010/02/10  

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