Datasheet > MMBT2222A_10

MMBT2222A_10

更新时间： 2024-11-05 11:52:35

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
4页	114K
描述
NPN General Purpose Amplifier

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中文翻译

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数据手册

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MMBT2222A_10 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT2222A

Micro Commercial Components

Features

•

Surface Mount SOT-23 Package

•

Capable of 350mWatts of Power Dissipation, I^C=600mA

NPN General

Purpose Amplifier

•

Operating Junction Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

Marking:1P

Electrical Characteristics @ 25°C Unless Otherwise Specified

SOT-23

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEX

Collector-Emitter Breakdown Voltage*

(I_C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10µAdc, I_C=0)

Collector Cutoff Current

Vdc

6.0

Vdc

nAdc

(V_CE=60Vdc, V_BE=3.0Vdc)

ON CHARACTERISTICS

h_FE

DC Current Gain*

(I_C=0.1mAdc, V_CE=10Vdc)

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

(I_C=150mAdc, V_CE=10Vdc)

(I_C=150mAdc, V_CE=1.0Vdc)

(I_C=500mAdc, V_CE=10Vdc)

Collector-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

100

DIMENSIONS

300

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

V_CE(sat)

0.3

1.0

Vdc

V_BE(sat)

0.6

1.2

2.0

.085

.37

SMALL-SIGNAL CHARACTERISTICS

Suggested Solder

Pad Layout

f_T

Current Gain-Bandwidth Product

(I_C=20mAdc, V_CE=20Vdc, f=100MHz)

300

MHz

C_obo

C_ibo

Output Capacitance

(V_CB=10Vdec, I_E=0, f=1.0MHz)

Input Capacitance

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

Noise Figure

.031

.800

8.0

.035

.900

.079

2.000

inches

4.0

(I_C=100µAdc, V_CE=10Vdc, R_S=1.0kΩ

f=1.0kHz)

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=30Vdc, V_BE=0.5Vdc

I_C=150mAdc, I_B1=15mAdc)

(V_CC=30Vdc, I_C=150mAdc

I_B1=I_B2=15mAdc)

225

.037

.950

t_r

t_s

t_f

.037

.950

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

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Revision: 8

2010/02/10

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与MMBT2222A_10相关器件

型号	品牌	获取价格	描述	数据表
MMBT2222A_11	UTC	获取价格	NPN GENERAL PURPOSE AMPLIFIER
MMBT2222A_11	MCC	获取价格	NPN General Purpose Amplifier
MMBT2222A_16	DIODES	获取价格	40V NPN SMALL SIGNAL TRANSISTOR
MMBT2222A_F40	FAIRCHILD	获取价格	Transistor
MMBT2222A_NL	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA,
MMBT2222A-13-F	DIODES	获取价格	40V NPN SMALL SIGNAL TRANSISTOR
MMBT2222A-7	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2222A-7-F	TI	获取价格	evaluation of the features of the TAS5548 PWM digital audio processor.
MMBT2222A-7-F	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2222A-AE3-6-R	UTC	获取价格	Transistor

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