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MM8006 PDF预览

MM8006

更新时间: 2024-11-03 22:30:03
品牌 Logo 应用领域
ASI 晶体晶体管
页数 文件大小 规格书
1页 19K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

MM8006 技术参数

生命周期:Active零件包装代码:TO-72
包装说明:CYLINDRICAL, O-MBCY-W4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A基于收集器的最大容量:3 pF
集电极-发射极最大电压:10 V配置:SINGLE
最小直流电流增益 (hFE):25最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-72JESD-30 代码:O-MBCY-W4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.6 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1000 MHz
Base Number Matches:1

MM8006 数据手册

  
MM8006  
NPN SILICON HIGH FREQUENCY TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE TO-72  
The ASI MM8006 is Designed for  
High Frequency Low Noise Amplifier  
and Oscillator Applications.  
MAXIMUM RATINGS  
50 mA  
15 V  
IC  
VCBO  
PDISS  
TJ  
600 mW @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +200 °C  
1 = EMITTER  
2 = BASE  
3 = COLLECTOR  
4 = CASE  
TSTG  
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 3.0 mA  
10  
15  
V
V
BVCBO  
IC = 1.0 µA  
VCB = 15 V  
0.01  
1.0  
ICBO  
µA  
V
CB = 15 V  
IE = 10 µA  
CE = 1.0 V  
TA = 150 °C  
BVEBO  
hFE  
3.0  
25  
V
---  
V
V
IC = 1.0 mA  
IB = 1.0 mA  
IB = 1.0 mA  
VCE(SAT)  
VBE(SAT)  
IC = 10 mA  
IC = 10 mA  
0.4  
1.0  
V
ft  
VCE = 10 V  
VCB = 0 V  
IC = 4.0 mA  
f = 100 MHz  
f = 140 KHz  
f = 140 KHz  
1000  
MHz  
pF  
3.0  
1.7  
Cob  
Cib  
VCB = 10 V  
VEB = 0.5 V  
f = 140 KHz  
2.0  
pF  
NF  
VCE = 6.0 V  
VCB = 12 V  
IC = 1.0 mA  
IC = 6.0 mA  
f = 60 MHz  
6.0  
dB  
dB  
Gpe  
f = 200 MHz  
15  
Pout  
30  
25  
mW  
%
VCB = 15 V  
IC = 8.0 mA  
f = 500 MHz  
η
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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