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MM74C907N/B+ PDF预览

MM74C907N/B+

更新时间: 2024-02-11 22:32:12
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美国国家半导体 - NSC /
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4页 109K
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MM74C907N/B+ 数据手册

 浏览型号MM74C907N/B+的Datasheet PDF文件第2页浏览型号MM74C907N/B+的Datasheet PDF文件第3页浏览型号MM74C907N/B+的Datasheet PDF文件第4页 
March 1988  
MM54C906/MM74C906  
Hex Open Drain N-Channel Buffers  
MM54C907/MM74C907  
Hex Open Drain P-Channel Buffers  
General Description  
Features  
Wide supply voltage range  
Guaranteed noise margin  
High noise immunity  
Y
Y
Y
Y
3V to 15V  
1V  
These buffers employ monolithic CMOS technology in  
achieving open drain outputs. The MM54C906/MM74C906  
consists of six inverters driving six N-channel devices; and  
the MM54C907/MM74C907 consists of six inverters driving  
six P-channel devices. The open drain feature of these buff-  
ers makes level shifting or wire AND and wire OR functions  
by just the addition of pull-up or pull-down resistors. All in-  
puts are protected from static discharge by diode clamps to  
0.45 V  
CC  
(typ.)  
High current sourcing and sinking  
open drain outputs  
V
CC  
and to ground.  
Connection and Logic Diagrams  
Dual-In-Line Package  
TL/F/5911–1  
Top View  
Order Number MM54C906, MM54C907, MM74C906 or MM74C907  
MM54C906/MM74C906  
MM54C907/MM74C907  
TL/F/5911–2  
TL/F/5911–3  
C
1995 National Semiconductor Corporation  
TL/F/5911  
RRD-B30M105/Printed in U. S. A.  

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