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MLL14KESD28ATRE3

更新时间： 2024-10-28 20:36:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
4页 148K
描述
Trans Voltage Suppressor Diode, 28V V(RWM), Unidirectional,

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MLL14KESD28ATRE3 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.68
最大钳位电压：49.1 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
极性：UNIDIRECTIONAL最大重复峰值反向电压：28 V
子类别：Transient Suppressors表面贴装：YES
Base Number Matches：1

MLL14KESD28ATRE3 数据手册

 浏览型号MLL14KESD28ATRE3的Datasheet PDF文件第2页浏览型号MLL14KESD28ATRE3的Datasheet PDF文件第3页浏览型号MLL14KESD28ATRE3的Datasheet PDF文件第4页 
MLL14KESD5.0 thru MLL14KESD170A, e3  
SURFACE MOUNT TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These surface mount Transient Voltage Suppressor (TVS) devices feature  
the ability to clamp dangerous high voltage short-term transients such as  
produced by direct or radiated electro-static discharge phenomena before  
entering sensitive component regions of a circuit design. They are small  
economical TVSs targeted primarily for short term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as seen in Figure 1.  
DO-213AB  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 40,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients of 14,000 Watts per MIL-  
STD-750, Method 1020 (approximately 150 ns  
exponential wave, or one microsecond transients up to  
4000 watts. See Figure #1 and #2 for overall transient  
Peak Pulse Power.  
•
•
Minimal capacitance (See Figure #3)  
Small surface-mount footprint for high density  
mounting  
•
Bidirectional features available by adding a “C” or  
“CA” suffix to part number  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5V to 170V  
Hermetic DO-213AB package. Also available in axial-  
leaded DO-41package (see separate data sheet for  
14KESD5.0 series)  
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
4000 Watts for One Microsecond Square Wave or  
14,000 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
•
•
CASE: Hermetically sealed DO-213AB glass MELF  
package  
FINISH: End caps are tin-lead or RoHS compliant  
matte-Tin plated solderable per MIL-STD-750,  
method 2026  
•
•
•
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
Thermal Resistance: 40 ºC/W junction to end cap, or  
120ºC/W junction to ambient when mounted on FR4  
PC board (1 oz Cu) with recommended footprint (see  
last page)  
•
•
•
POLARITY: Cathode indicated by band.  
MARKING: Cathode band only  
TAPE & REEL optional: Standard per EIA-481-B  
with 12 mm tape, 1500 per 7 inch reel or 5000 per  
13 inch reel (add “TR” suffix to part number)  
•
Steady-State Power: 1.50 watts at TEC < 115oC, or  
1.25 watts at TA = 25ºC when mounted on FR4 PC  
board and recommended footprint as described for  
thermal resistance (also see Figure 1)  
•
•
WEIGHT: 0.05 grams  
See package dimensions on last page  
•
•
Derate at 22.8 W/oC above 25oC for PPP (1μs) and at  
15 mW/oC above 75oC for dc power.  
Forward Surge Current 500 amps for 1μs at TL =  
25oC (rise time > 100 ns).  
Copyright © 2006  
3-29-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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MLL14KESD28CATR MICROSEMI

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MLL14KESD28CATRE3 MICROSEMI

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MLL14KESD28CE3 MICROSEMI

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MLL14KESD28CE3TR MICROSEMI

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MLL14KESD28CTR MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 28V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD28E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 28V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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