Datasheet > MLL14KESD16CAE3TR

MLL14KESD16CAE3TR

更新时间： 2024-10-28 17:42:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	161K
描述
Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MELF-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MLL14KESD16CAE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-213AB	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	最小击穿电压：	17.8 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-213AB	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	4000 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	1.25 W
认证状态：	Not Qualified	最大重复峰值反向电压：	16 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MLL14KESD16CAE3TR 数据手册

浏览型号MLL14KESD16CAE3TR的Datasheet PDF文件第2页

浏览型号MLL14KESD16CAE3TR的Datasheet PDF文件第3页

浏览型号MLL14KESD16CAE3TR的Datasheet PDF文件第4页

MLL14KESD5.0 thru MLL14KESD170A, e3

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These surface mount Transient Voltage Suppressor (TVS) devices feature

the ability to clamp dangerous high voltage short-term transients such as

produced by direct or radiated electro-static discharge phenomena before

entering sensitive component regions of a circuit design. They are small

economical TVSs targeted primarily for short term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as seen in Figure 1.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients of 14,000 Watts per MIL-

STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients up to

4000 watts. See Figure #1 and #2 for overall transient

Peak Pulse Power.

•

Minimal capacitance (See Figure #3)

Small surface-mount footprint for high density

mounting

•

Bidirectional features available by adding a “C” or

“CA” suffix to part number

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-213AB package. Also available in axial-

leaded DO-41package (see separate data sheet for

14KESD5.0 series)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed DO-213AB glass MELF

package

FINISH: End caps are tin-lead or RoHS compliant

matte-Tin plated solderable per MIL-STD-750,

method 2026

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

Thermal Resistance: 40 ^ºC/W junction to end cap, or

120^ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint (see

last page)

•

POLARITY: Cathode indicated by band.

MARKING: Cathode band only

TAPE & REEL optional: Standard per EIA-481-B

with 12 mm tape, 1500 per 7 inch reel or 5000 per

13 inch reel (add “TR” suffix to part number)

•

Steady-State Power: 1.50 watts at T_EC< 115^oC, or

1.25 watts at T_A= 25^ºC when mounted on FR4 PC

board and recommended footprint as described for

thermal resistance (also see Figure 1)

•

WEIGHT: 0.05 grams

See package dimensions on last page

•

Derate at 22.8 W/^oC above 25^oC for P_PP(1μs) and at

15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1μs at T_L=

25^oC (rise time > 100 ns).

8-27-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MLL14KESD16CAE3TR相关器件

型号	品牌	获取价格	描述	数据表
MLL14KESD16CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD16CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 16V V(RWM), Bidirectional,
MLL14KESD16CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD16CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD16CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD16CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 16V V(RWM), Bidirectional,
MLL14KESD16E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD16E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD16TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD17	MICROSEMI	获取价格	SURFACE MOUNT

与MLL14KESD16CAE3TR相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

12
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

12
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

39
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL14KESD16CAE3TR

MLL14KESD16CAE3TR 技术参数

MLL14KESD16CAE3TR 数据手册

与MLL14KESD16CAE3TR相关器件

与MLL14KESD16CAE3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL14KESD16CAE3TR

MLL14KESD16CAE3TR 技术参数

MLL14KESD16CAE3TR 数据手册

与MLL14KESD16CAE3TR相关器件

与MLL14KESD16CAE3TR相关文章

您还可以找

您在本页遇到什么问题？