Datasheet > MLL14KESD11AE3

MLL14KESD11AE3

更新时间： 2024-10-27 13:21:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	166K
描述
Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MELF-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MLL14KESD11AE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-213AB	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	Is Samacsys：	N
最小击穿电压：	12.2 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-213AB
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	4000 W	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	1.25 W	认证状态：	Not Qualified
最大重复峰值反向电压：	11 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MLL14KESD11AE3 数据手册

MLL14KESD5.0 thru MLL14KESD170A, e3

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These surface mount Transient Voltage Suppressor (TVS) devices feature

the ability to clamp dangerous high voltage short-term transients such as

produced by direct or radiated electro-static discharge phenomena before

entering sensitive component regions of a circuit design. They are small

economical TVSs targeted primarily for short term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as seen in Figure 1.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients of 14,000 Watts per MIL-

STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients up to

4000 watts. See Figure #1 and #2 for overall transient

Peak Pulse Power.

•

Minimal capacitance (See Figure #3)

Small surface-mount footprint for high density

mounting

•

Bidirectional features available by adding a “C” or

“CA” suffix to part number

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-213AB package. Also available in axial-

leaded DO-41package (see separate data sheet for

14KESD5.0 series)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed DO-213AB glass MELF

package

FINISH: End caps are tin-lead or RoHS compliant

matte-Tin plated solderable per MIL-STD-750,

method 2026

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

Thermal Resistance: 40 ^ºC/W junction to end cap, or

120^ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint (see

last page)

•

POLARITY: Cathode indicated by band.

MARKING: Cathode band only

TAPE & REEL optional: Standard per EIA-481-B

with 12 mm tape, 1500 per 7 inch reel or 5000 per

13 inch reel (add “TR” suffix to part number)

•

Steady-State Power: 1.50 watts at T_EC< 115^oC, or

1.25 watts at T_A= 25^ºC when mounted on FR4 PC

board and recommended footprint as described for

thermal resistance (also see Figure 1)

•

WEIGHT: 0.05 grams

See package dimensions on last page

•

Derate at 22.8 W/^oC above 25^oC for P_PP(1μs) and at

15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1μs at T_L=

25^oC (rise time > 100 ns).

8-27-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MLL14KESD11AE3相关器件

型号	品牌	获取价格	描述	数据表
MLL14KESD11AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD11ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD11ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,
MLL14KESD11C	MICROSEMI	获取价格	SURFACE MOUNT TVS
MLL14KESD11CA	MICROSEMI	获取价格	SURFACE MOUNT TVS
MLL14KESD11CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD11CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD11CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD11CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,
MLL14KESD11CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

与MLL14KESD11AE3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

10
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

10
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

37
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

45

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL14KESD11AE3

MLL14KESD11AE3 技术参数

MLL14KESD11AE3 数据手册

与MLL14KESD11AE3相关器件

与MLL14KESD11AE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL14KESD11AE3

MLL14KESD11AE3 技术参数

MLL14KESD11AE3 数据手册

与MLL14KESD11AE3相关器件

与MLL14KESD11AE3相关文章

您还可以找

您在本页遇到什么问题？