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MLL1.4KESD26CAE3TR PDF预览

MLL1.4KESD26CAE3TR

更新时间： 2024-11-06 20:42:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 210K
描述
Trans Voltage Suppressor Diode, 400W, 26V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

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MLL1.4KESD26CAE3TR 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-213AA包装说明：O-LELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84Is Samacsys：N
最小击穿电压：28.9 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-213AA
JESD-30 代码：O-LELF-R2JESD-609代码：e3
最大非重复峰值反向功率耗散：400 W元件数量：1
端子数量：2封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：0.5 W认证状态：Not Qualified
最大重复峰值反向电压：26 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MLL1.4KESD26CAE3TR 数据手册

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MLL1.4KESD5.0 thru MLL1.4KESD170CA, e3  
SURFACE MOUNT TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small surface mount TVS devices feature the ability to clamp  
dangerous high voltage short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-213AA  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 15,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
•
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients* of 1400 Watts per MIL-  
STD-750, Method 1020 (approx. 150 ns exponential  
wave, or one microsecond transients up to 400 watts.  
See Figure #1 and #2 for overall transient Peak Pulse  
Power.  
Low inherent capacitance for high-frequency  
applications (See Figure #4)  
•
•
Small surface mount foot print  
Bidirectional features available by adding a “C” or  
“CA” suffix  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5 V to 170 V  
Hermetic DO-213AA Package. Also available in axial-  
leaded DO-35 package (see separate data sheet for  
1.4KESD5.0 series)  
•
RoHS Compliant devices available by adding “e3” sufffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
400 Watts for One Microsecond Square Wave or  
1400 watts per ESD Wave form of MIL-STD-750,  
method 1020  
•
CASE: Hermetically sealed glass DO-213AA surface  
mount package  
•
FINISH: Tin-lead or RoHS compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
•
•
•
See Surge Rating curves in Figures #1, 2 and 3  
Operating and storage temperature –65oC to 175oC  
•
•
•
•
POLARITY: Banded end is cathode  
WEIGHT: 0.04 grams (typical)  
MARKING: Cathode band only  
THERMAL RESISTANCE: 150oC/W junction to end  
cap  
•
•
DC power dissipation 500 mW at TEC ≤ 100oC  
TAPE & REEL option: Standard per EIA-481-B (add  
“TR” suffix to part number)  
Derate at 2.3 W/oC above 25oC for PPP (1μs) and at  
6.67 mW/oC above 100oC for dc power  
•
See package dimension on last page  
•
Forward Surge Current 50 amps for 1μs at TL = 25oC  
(rise time > 100 ns)  
Copyright © 2006  
3-29-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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