Datasheet > MLL1.4KESD22AE3

MLL1.4KESD22AE3

更新时间： 2024-11-14 20:42:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	210K
描述
Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MLL1.4KESD22AE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-213AA	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	最小击穿电压：	24.4 V
外壳连接：	ISOLATED	最大钳位电压：	46.2 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-213AA
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	400 W	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	0.5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	22 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MLL1.4KESD22AE3 数据手册

MLL1.4KESD5.0 thru MLL1.4KESD170CA, e3

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small surface mount TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-213AA

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 1400 Watts per MIL-

STD-750, Method 1020 (approx. 150 ns exponential

wave, or one microsecond transients up to 400 watts.

See Figure #1 and #2 for overall transient Peak Pulse

Power.

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Small surface mount foot print

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-213AA Package. Also available in axial-

leaded DO-35 package (see separate data sheet for

1.4KESD5.0 series)

•

RoHS Compliant devices available by adding “e3” sufffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020

•

CASE: Hermetically sealed glass DO-213AA surface

mount package

•

FINISH: Tin-lead or RoHS compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curves in Figures #1, 2 and 3

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.04 grams (typical)

MARKING: Cathode band only

THERMAL RESISTANCE: 150^oC/W junction to end

cap

•

DC power dissipation 500 mW at T_EC≤ 100^oC

TAPE & REEL option: Standard per EIA-481-B (add

“TR” suffix to part number)

Derate at 2.3 W/^oC above 25^oC for P_PP(1μs) and at

6.67 mW/^oC above 100^oC for dc power

•

See package dimension on last page

•

Forward Surge Current 50 amps for 1μs at T_L= 25^oC

(rise time > 100 ns)

3-29-2006 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MLL1.4KESD22AE3相关器件

型号	品牌	获取价格	描述	数据表
MLL1.4KESD22AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD22ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD22A-TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD22ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Unidirectional,
MLL1.4KESD22C	ETC	获取价格	Transient Voltage Suppressor[Qual Data]
MLL1.4KESD22CA	ETC	获取价格	Transient Voltage Suppressor[Qual Data]
MLL1.4KESD22CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD22CA-TR	MICROSEMI	获取价格	BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA, HERMETIC SEALED, GLASS, 2 PIN
MLL1.4KESD22CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Bidirectional,
MLL1.4KESD22CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

与MLL1.4KESD22AE3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL1.4KESD22AE3

MLL1.4KESD22AE3 技术参数

MLL1.4KESD22AE3 数据手册

与MLL1.4KESD22AE3相关器件

与MLL1.4KESD22AE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL1.4KESD22AE3

MLL1.4KESD22AE3 技术参数

MLL1.4KESD22AE3 数据手册

与MLL1.4KESD22AE3相关器件

与MLL1.4KESD22AE3相关文章

您还可以找

您在本页遇到什么问题？