MLL1.4KESD18CATR

更新时间： 2024-11-14 12:58:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		电视
页数	文件大小	规格书
4页	206K
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数据手册

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MLL1.4KESD18CATR 数据手册

MLL1.4KESD5.0 thru MLL1.4KESD170CA

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small surface mount TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-213AA

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

Absorbs ESD level transients* of 1400 Watts per

MIL-STD-750, Method 1020 (approx. 150 ns

exponential wave, or one microsecond transients up

to 400 watts. See Figure #1 and #2 for overall

transient Peak Pulse Power.

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-213AA Package. Also available in

axial-leaded DO-35 package (see separate data

sheet for 1.4KESD5.0 series)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Small surface mount foot print

Bidirectional features available by adding a “C” or

“CA” suffix

•

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020

•

CASE: Hermetically sealed glass DO-213AA surface

mount package

TERMINALS: Leads, tin-lead plated solderable per

MIL-STD-750, method 2026

POLARITY: Banded end is cathode

WEIGHT: 0.04 grams (typical)

MARKING: Cathode band only

•

See Surge Rating curves in Figures #1, 2 and 3

Operating and storage temperature –65^oC to 175^oC

•

THERMAL RESISTANCE: 150^oC/W junction to end

cap

•

DC power dissipation 500 mW at T_EC≤ 100^oC

TAPE & REEL option: Standard per EIA-481-B (add

Derate at 2.3 W/^oC above 25^oC for P_PP(1µs) and at

“TR” suffix to part number)

6.67 mW/^oC above 100^oC for dc power

•

See package dimension on last page

•

Forward Surge Current 50 amps for 1µs at T_L= 25^oC

(rise time > 100 ns)

Microsemi

Page 1

10-06-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与MLL1.4KESD18CATR相关器件

型号	品牌	获取价格	描述	数据表
MLL1.4KESD18CA-TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD18CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Bidirectional,
MLL1.4KESD18CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD18CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD18CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD18CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Bidirectional,
MLL1.4KESD18E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD18E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD18TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD18TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional,

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