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MLCE33AE3 PDF预览

MLCE33AE3

更新时间: 2024-11-13 18:26:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 332K
描述
Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN

MLCE33AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.77
其他特性:HIGH RELIABILITY最大击穿电压:40.6 V
最小击穿电压:36.7 V击穿电压标称值:38.65 V
外壳连接:ISOLATED最大钳位电压:53.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:33 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MLCE33AE3 数据手册

 浏览型号MLCE33AE3的Datasheet PDF文件第2页浏览型号MLCE33AE3的Datasheet PDF文件第3页浏览型号MLCE33AE3的Datasheet PDF文件第4页浏览型号MLCE33AE3的Datasheet PDF文件第5页 

MLCE33AE3 替代型号

型号 品牌 替代类型 描述 数据表
MALCE33A MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MALCE33AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, ROH
MXLLCE33A MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, PLA

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