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ML63Q8036-NNNTB(Tray) PDF预览

ML63Q8036-NNNTB(Tray)

更新时间: 2024-11-05 17:03:27
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
4页 169K
描述
ML63Q8000 group is equipped with a Hardware Linkage Controller (HLC) unique to LAPIS Technology, w

ML63Q8036-NNNTB(Tray) 数据手册

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4V Drive Nch MOSFET  
RSH065N03  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
SOP8  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (SOP8).  
Application  
Power switching, DC / DC converter.  
Each lead has same dimensions  
Packaging specifications  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
RSH065N03  
2  
(1) (2) (3) (4)  
1  
(1)Source  
(2)Source  
(3)Source  
(4)Gate  
(5)Drain  
(6)Drain  
(7)Drain  
(8)Drain  
Absolute maximum ratings (Ta=25C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
V
(1)  
(2)  
(3)  
(4)  
30  
20  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Continuous  
Pulsed  
6.5  
A
Drain current  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
1
IDP  
IS  
A
26  
Continuous  
Pulsed  
1.6  
A
Source current  
(Body diode)  
1
2
ISP  
PD  
A
6.4  
Total power dissipation  
Channel temperature  
2
W
°C  
°C  
Tch  
150  
Storage temperature  
Tstg  
55 to +150  
1 Pw10μs, Duty cycle1%  
2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Limits  
62.5  
Unit  
Channel to ambient  
Mounted on a ceramic board.  
Rth (ch-a)  
°C / W  
www.rohm.com  
2009.12 - Rev.A  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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