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MKI100-12E8 PDF预览

MKI100-12E8

更新时间: 2024-11-11 19:59:15
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
4页 183K
描述
Insulated Gate Bipolar Transistor, 165A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-14

MKI100-12E8 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-X8针数:14
Reach Compliance Code:compliant风险等级:5.82
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):165 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X8元件数量:4
端子数量:8最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):640 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):795 ns标称接通时间 (ton):345 ns
VCEsat-Max:2.5 VBase Number Matches:1

MKI100-12E8 数据手册

 浏览型号MKI100-12E8的Datasheet PDF文件第2页浏览型号MKI100-12E8的Datasheet PDF文件第3页浏览型号MKI100-12E8的Datasheet PDF文件第4页 
MWI 100-12 E8  
MKI 100-12 E8  
IC25  
VCES  
VCE(sat) typ. = 2.0 V  
= 165 A  
= 1200 V  
IGBT Modules  
Sixpack, H Bridge  
Short Circuit SOA Capability  
Square RBSOA  
13, 21  
13, 21  
1
2
9
5
6
9
1
2
10  
10  
19  
17  
15  
19  
15  
7
8
11  
12  
11  
12  
3
3
4
E72873  
4
See outline drawing for pin arrangement  
14, 20  
14, 20  
MWI  
MKI  
Fatures  
• NPIGBTs  
IGBTs  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
TVJ = 25°C to 150°C  
1200  
20  
- fast switching  
VGES  
V
- short tail current for optimized  
performance also in resonant circuits  
• HiPerFREDTM diode:  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
165  
115  
A
A
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
• Industry Standard Package  
- solderable pins for PCB mounting  
- isolated copper base plate  
ICM  
VCEK  
VGE = 15 V; RG = 12 Ω; TVJ = 125°C  
200  
VCES  
A
µs  
W
RBSOA; clamped inductive load; L = 100 µH  
tSC  
VCE = 900 V; VGE = 15 V; RG = 12 Ω; TVJ = 125°C  
SCSOA; non-repetitive  
10  
Ptot  
TC = 25°C  
640  
Typical Applications  
Symbol  
VCE(sat)  
Conditions  
Characteristic Values  
• MWI  
- AC drives  
- power supplies with power factor  
correction  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
IC = 100 A; VG= V; TVJ = 25°C  
TVJ = 125°C  
2.0  
2.3  
2.5  
V
V
• MKI  
- motor control  
VGE(th)  
ICES  
IC = 4 mA; VGE = VCE  
4.5  
6.5  
V
. DC motor amature winding  
. DC motor excitation winding  
. synchronous motor excitation winding  
- supply of transformer primary winding  
. power supplies  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.4 mA  
mA  
1.4  
IGES  
VCE = 0 V; VGE  
=
20 V  
400 nA  
. welding  
. X-ray  
. battery charger  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
330  
15  
750  
45  
12  
10  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 100 A  
VGE = 15 V; RG = 12 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 150 A  
7.4  
0.76  
nF  
µC  
RthJC  
(per IGBT)  
0.19 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2007 IXYS All rights reserved  
20070912a  
1 - 4  

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