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MJE16004 PDF预览

MJE16004

更新时间： 2024-11-24 22:46:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
10页 427K
描述
NPN SILICON POWER TRANSISTORS

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中文翻译

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MJE16004 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.42
Is Samacsys：N最大集电极电流 (IC)：5 A
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：7JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：80 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MJE16004 数据手册

 浏览型号MJE16004的Datasheet PDF文件第2页浏览型号MJE16004的Datasheet PDF文件第3页浏览型号MJE16004的Datasheet PDF文件第4页浏览型号MJE16004的Datasheet PDF文件第5页浏览型号MJE16004的Datasheet PDF文件第6页浏览型号MJE16004的Datasheet PDF文件第7页 
Order this document  
by MJE16002/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
These transistors are designed for high–voltage, high–speed switching of inductive  
circuits where fall time and RBSOA are critical. They are particularly well–suited for  
line–operated switchmode applications.  
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for  
applications where drive current is limited.  
5.0 AMPERE  
NPN SILICON  
POWER TRANSISTORS  
450 VOLTS  
80 WATTS  
Typical Applications:  
•
•
•
•
•
Switching Regulators  
High Resolution Deflection Circuits  
Inverters  
Motor Drives  
Fast Switching Speeds  
50 ns Inductive Fall Time @ 75 C (Typ)  
70 ns Crossover Time @ 75 C (Typ)  
100 C Performance Specified for:  
Reverse–Biased SOA  
•
Inductive Switching Times  
Saturation Voltages  
Leakage Currents  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
450  
850  
6.0  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
5.0  
10  
I
CM  
Base Current — Continuous  
— Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation @ T = 25 C  
P
80  
32  
0.64  
Watts  
C
D
@ T = 100 C  
C
Derate above T = 25 C  
C
W/ C  
C
Operating and Storage Junction Temperature Range  
T , T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.56  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds  
R
θJC  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 2  
Motorola, Inc. 1995
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与MJE16004相关器件

型号 品牌 获取价格 描述 数据表
MJE1600416A MOTOROLA

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 		5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6200 RENESAS

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 		5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6203 RENESAS

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 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004-6226 RENESAS

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 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004-6258 RENESAS

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 		5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6261 RENESAS

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 		5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6263 RENESAS

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 		5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16004-6264 RENESAS

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 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004-6265 RENESAS

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 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16004A MOTOROLA

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 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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