Datasheet > MJE13007H

MJE13007H

更新时间： 2024-11-12 00:04:27

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描述
MJE SERIES TRANSISTORS

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中文翻译

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数据手册

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MJE13007H 数据手册

Shenzhen SI Semiconductors Co., LTD.

Product Specification

MJE SERIES TRANSISTORS

MJE13007H

FEATURES

HIGH VOLTAGE CAPABILITY

FLUORESCENT LAMP

HIGH SPEED SWITCHING

ELECTRONIC BALLAST

WIDE SOA

ELECTRONIC TRANSFORMER

APPLICATION:

SWITCH MODE POWER SUPPLY

Absolute Maximum Ratings Tc=25°C

TO-220

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

700

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter- Base Voltage

Collector Current

400

6.0

Total Power Dissipation

Junction Temperature

Storage Temperature

P_C

°C

150

Tstg

-65-150

Electronic Characteristics Tc=25°C

CHARACTERISTICS

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Collector-Emitter Voltage

Emitter -Base Voltage

SYMBOL

TEST CONDITION

V_CB=700V

MIN

MAX

100

UNIT

I_CBO

I_CEO

V_CE=400V,I_B=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

250

V_CEO

400

V_EBO

Collector-Emitter Saturation

Voltage

I_C=1A,I_B=0.2A

I_C=4.0A,I_B=1.0A

I_C=1A,I_B=0.2A

V_CE=5V,I_C=10mA

V_CE=5V,I_C=1.0A

0.4

1.0

1.2

Vcesat

Vbesat

Base-Emitter Saturation Voltage

DC Current Gain

h_FE

V_CE=5V,I_C=6.0A

_CC=5V,

Storage Time

Falling Time

t_S

t_f

2.0

4.5

0.8

I_C=0.5A

(UI9600)

µS

Si semiconductors 2005.12

12 3

中文翻译

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