Datasheet > MJ450

MJ450

更新时间： 2024-11-14 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	63K
描述
isc Silicon PNP Power Transistor

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中文翻译

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MJ450 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJ450

DESCRIPTION

·Low Saturation Voltage-

: V_CE(sat)=-1V@I_C=-10Adc

·DC Current Gain-

: h_FE=20(Min)@ I_C=-10A

APPLICATIONS

·Designed for high-current switching and general

purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

-40

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

-30

I_B

-5

P_C

150

℃

T_J

200

Storage Temperature

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.17

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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