生命周期: | Transferred | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.23 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 90 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-204AA |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 200 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
VCEsat-Max: | 0.8 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJ4502G | ONSEMI |
功能相似 |
High-Power PNP Silicon Transistor | |
KSE13009 | FAIRCHILD |
功能相似 |
High Voltage Switch Mode Application |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJ4502G | ONSEMI |
获取价格 |
High-Power PNP Silicon Transistor | |
MJ4502LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
MJ4530FE-R52 | OHMITE |
获取价格 |
RES 453 OHM 1/8W 1% AXIAL | |
MJ4531FE-R52 | OHMITE |
获取价格 |
RES 4.53K OHM 1/8W 1% AXIAL | |
MJ45C11192 | WINCHESTER |
获取价格 |
Card Edge Connector, 90 Contact(s), 2 Row(s), Female, Straight, 0.1 inch Pitch, Press Fit | |
MJ45C11195 | WINCHESTER |
获取价格 |
Card Edge Connector, 90 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, | |
MJ45C11792 | WINCHESTER |
获取价格 |
Card Edge Connector, 90 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, ROHS C | |
MJ45C12192 | WINCHESTER |
获取价格 |
Card Edge Connector, 90 Contact(s), 2 Row(s), Female, Straight, 0.1 inch Pitch, Press Fit | |
MJ45C12195 | WINCHESTER |
获取价格 |
Card Edge Connector, 90 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, | |
MJ45C12792 | WINCHESTER |
获取价格 |
Card Edge Connector, 90 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, ROHS C |