Datasheet > MJ16022

MJ16022

更新时间： 2024-11-03 22:46:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	171K
描述
NPN SILICON POWER TRANSISTOR 30 AMPERES 450 VOLTS

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MJ16022 数据手册

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by MJ16020/D

SEMICONDUCTOR TECHNICAL DATA

NPN SILICON POWER

TRANSISTOR

30 AMPERES

These transistors are designed for high–voltage, high–speed, power switching in

inductive circuits where fall time is critical. They are particularly suited for

line–operated switchmode applications. The MJ16022 is a selected high–gain version

of the MJ16020 for applications where drive current is limited.

Features:

450 VOLTS

•

Fast Switching Times:

30 ns (Typ) Inductive Fall Time

50 ns (Typ) Inductive Crossover Time

800 ns (Typ) Inductive Storage Time

100 C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

•

CASE 197A–05

TO–204AE

Typical Applications:

•

Switching Regulators

Inverters

Solenoids and Relay Drivers

Motor Controls

Deflection Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

Symbol

Max

450

850

Unit

Vdc

Adc

CEO

CEV

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

250

1.42

Watts

W/ C

Operating and Storage Temperature

T , T

–65 to 200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.7

Unit

C/W

Thermal Resistance — Junction to Case

θJC

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

275

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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