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MH32D72AKLA-10 PDF预览

MH32D72AKLA-10

更新时间: 2024-11-28 22:05:35
品牌 Logo 应用领域
三菱 - MITSUBISHI 动态存储器
页数 文件大小 规格书
38页 326K
描述
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

MH32D72AKLA-10 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:,针数:184
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:SINGLE BANK PAGE BURST最长访问时间:0.8 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N184
内存密度:2415919104 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:184
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX72
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

MH32D72AKLA-10 数据手册

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Preliminary Spec.  
Some contents are subject to change without notice.  
MITSUBISHI LSIs  
MH32D72AKLA-10,-75  
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module  
DESCRIPTION  
The MH32D72AKLA is 33554432 - word x 72-bit Double  
Data Rate(DDR) Sy nchronous DRAM mounted module.  
This consists of 18 industry standard 32M x 4 DDR  
Sy nchronous DRAMs in TSOP with SSTL_2 interf ace which  
achiev es v ery high speed data rate up to 133MHz.  
This socket-ty pe memory module is suitable f or main  
memory in computer systems and easy to interchange or  
add modules.  
93pin  
1pin  
FEATURES  
CLK  
Max.  
Access Time  
[component level]  
Type name  
Frequency  
+ 0.75ns  
MH32D72AKLA-75  
MH32D72AKLA-10  
133MHz  
100MHz  
+ 0.8ns  
144pin  
145pin  
- Utilizes industry standard 32M X 4 DDR Synchronous DRAMs  
in TSOP package , industry standard Registered Buffer in  
TSSOP package , and industry standard PLL in TSSOP package.  
- Vdd=Vddq=2.5v ±0.2V  
52pin  
53pin  
- Double data rate architecture; two data transf ers per  
clock cycle  
- Bidirectional, data strobe (DQS) is transmitted/receiv ed  
with data  
- Dif f erential clock inputs (CLK and /CLK)  
- data ref erenced to both edges of DQS  
- /CAS latency - 2.0/2.5 (programmable)  
- Burst length- 2/4/8 (programmable)  
- Auto precharge / All bank precharge controlled by A10  
- 4096 ref resh cycles /64ms  
- Auto ref resh and Self ref resh  
- Row address A0-11 / Column address A0-9,11  
- SSTL_2 Interf ace  
184pin  
92pin  
- Module 1bank Conf igration  
- Burst Ty pe - sequential/interleav e(programmable)  
- Commands entered on each positiv e CLK edge  
APPLICATION  
Main memory unit for PC, PC server  
MIT-DS-0398-1.1  
24.Nov.2000  
MITSUBISHI ELECTRIC  
1

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