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MH28D72KTN-75 PDF预览

MH28D72KTN-75

更新时间: 2024-10-27 20:09:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
39页 374K
描述
DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184

MH28D72KTN-75 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM184针数:184
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:SINGLE BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N184
内存密度:9663676416 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:184
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128MX72
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM184
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:2.5 V认证状态:Not Qualified
刷新周期:8192自我刷新:YES
子类别:Other Memory ICs最大压摆率:7.6 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

MH28D72KTN-75 数据手册

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Preliminary Spec.  
MITSUBISHI LSIs  
Some contents are subject to change without notice.  
MH28D72KTN-10,-75,-75A  
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module  
DESCRIPTION  
The MH28D72KTN is 134217728 - word x 72-bit Double  
Data Rate(DDR) Synchronous DRAM mounted module.  
This consists of 18 industry standard 128M x 4 DDR  
Synchronous DRAMs in TSOP with SSTL_2 interface which  
achieves very high speed data rate up to 133MHz.  
This socket-type memory module is suitable for main  
memory in computer systems and easy to interchange or  
add modules.  
93pin  
1pin  
FEATURES  
Clock Rate  
Type name  
CL=2 *  
CL=2.5 *  
100MHz  
MH28D72KTN-10  
MH28D72KTN-75  
100MHz  
100MHz  
133MHz  
133MHz  
MH28D72KTN-75A  
133MHz  
* CL = CAS(Read) Latency  
144pin  
145pin  
52pin  
53pin  
- Utilizes industry standard 128M X 4 DDR Synchronous DRAMs  
in TSOP package , industry standard Registered Buffer in  
TSSOP package , and industry standard PLL in TSSOP package.  
- Vdd=Vddq=2.5v±0.2V  
- Double data rate architecture; two data transfers per  
clock cycle  
- Bidirectional, data strobe (DQS) is transmitted/received  
with data  
- Differential clock inputs (CLK and /CLK)  
- data referenced to both edges of DQS  
- /CAS latency- 2.0/2.5 (programmable)  
- Burst length- 2/4/8 (programmable)  
- Auto precharge / All bank precharge controlled by A10  
- 8192 refresh cycles /64ms  
184pin  
92pin  
- Auto refresh and Self refresh  
- Row address A0-12 / Column address A0-9,11,12  
- SSTL_2 Interface  
- Module 1bank Configration  
- Burst Type - sequential/interleave(programmable)  
- Commands entered on each positive CLK edge  
APPLICATION  
Main memory unit for PC, PC server, Server, W S.  
MIT-DS-0453-0.0  
16.Jan.2002  
MITSUBISHI ELECTRIC  
1

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