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MGRB2025CT PDF预览

MGRB2025CT

更新时间: 2024-11-10 22:30:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 整流二极管软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
6页 159K
描述
Power Manager Gallium Arsenide Power Rectifier

MGRB2025CT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.92其他特性:FREE WHEELING DIODE
应用:HYPERFAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:GALLIUM ARSENIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.2 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
最大非重复峰值正向电流:40 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:250 V
最大反向恢复时间:0.0118 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MGRB2025CT 数据手册

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Order this document  
by MGRB2025CT/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity  
protection diodes, these state-of-the-art devices have the following features:  
GALLIUM ARSENIDE  
RECTIFIER  
Planar Epitaxial Construction  
20 AMPERES  
250 VOLTS  
Nitride Passivation for Stable Blocking Characteristics  
Monolithic Dual Die Construction – May be Paralleled for High Current Output  
(10A per leg or 20A per package)  
Epoxy Meets UL94, V @ 1/8  
Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns)  
Mechanical Characteristics  
O
1
3
2, 4  
Case: Epoxy, Molded  
2, 4  
Weight: 1.9 grams (approximately)  
Finish: All External Surfaces Corrosion Resistant & Terminal Leads are Readily Solderable  
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds  
Shipped 50 units per plastic tube  
Available in 24mm Tape and Reel, 800 units/reel by adding a T4 suffix to the part number  
Marking: MGRB2025CT  
1
3
CASE 418B–02  
2
D PAK  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
250  
V
RRM  
RWM  
R
V
DC Forward Current  
(T = 95°C)  
C
Per Leg  
I
10  
20  
40  
A
A
DC  
Peak Repetitive Forward Current  
Per Leg  
I
FRM  
(At Rated V , Square Wave, 20 kHz, T = 25°C)  
R
C
Non–Repetitive Peak Surge Current  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
Per Package  
I
A
FSM  
Operating Junction Temperature and Storage Temperature  
T , T  
55 to 175  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance – Junction to Case  
Thermal Resistance – Junction to Ambient  
ELECTRICAL CHARACTERISTICS  
Per Leg  
R
θJC  
R
θJA  
3.1  
53  
°C/W  
Per Leg  
T =25°C T =125°C  
Maximum Instantaneous Forward Voltage (1), see Figure 2  
Per Leg  
V
V
µA  
ns  
A
J
J
F
(I = 10 A)  
F
2.2  
1.5  
2.5  
1.6  
(I = 5 A)  
F
T =25°C T =125°C  
Maximum Instantaneous Reverse Current, see Figure 4  
Per Leg  
Per Leg  
Per Leg  
I
R
J
J
(V = 250 V)  
R
25  
2
440  
125  
(V = 125 V)  
R
T =25°C T =125°C  
Typical Reverse Recovery Time (2)  
t
rr  
J
J
(V = 200 V, I = 5 A, di/dt = 200 A/µs)  
R
F
11.8  
12.2  
12.0  
12.2  
(V = 200 V, I = 10 A, di/dt = 200 A/µs)  
R
F
T =25°C T =125°C  
Typical Peak Reverse Recovery Current  
(V = 200 V, I = 5 A, di/dt = 200 A/µs)  
I
RM  
J
J
R
F
1.4  
1.5  
1.4  
1.5  
(V = 200 V, I = 10 A, di/dt = 200 A/µs)  
R
F
Note: This data sheet contains advance information only and is subject to change without notice.  
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.  
(2) trr measured projecting from 25% of IRM to ground.  
Motorola, Inc. 1995  

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