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MGRB1018CT PDF预览

MGRB1018CT

更新时间: 2024-02-14 10:57:13
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 整流二极管光电二极管软恢复能力电源超快速软恢复能力电源软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
6页 157K
描述
10A, 180V, GALLIUM ARSENIDE, RECTIFIER DIODE, DIE

MGRB1018CT 技术参数

生命周期:Obsolete包装说明:X-XUUC-N
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.84
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:HYPERFAST SOFT RECOVERY POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:GALLIUM ARSENIDE
二极管类型:RECTIFIER DIODEJESD-30 代码:X-XUUC-N
最大非重复峰值正向电流:60 A元件数量:1
相数:1最大输出电流:10 A
封装主体材料:UNSPECIFIED封装形状:UNSPECIFIED
封装形式:UNCASED CHIP认证状态:Not Qualified
最大重复峰值反向电压:180 V最大反向恢复时间:0.013 µs
表面贴装:YES端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

MGRB1018CT 数据手册

 浏览型号MGRB1018CT的Datasheet PDF文件第2页浏览型号MGRB1018CT的Datasheet PDF文件第3页浏览型号MGRB1018CT的Datasheet PDF文件第4页浏览型号MGRB1018CT的Datasheet PDF文件第5页浏览型号MGRB1018CT的Datasheet PDF文件第6页 
Order this document  
by MGRB1018/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity  
protection diodes, these state-of-the-art devices have the following features:  
GALLIUM ARSENIDE  
RECTIFIER  
Planar Epitaxial Construction  
Nitride Passivation for Stable Blocking Characteristics  
Monolithic Dual Die Available (MGRB2018CT)  
10 AMPERES  
180 VOLTS  
Epoxy Meets UL94, V @ 1/8  
O
Hyperfast and Soft Reverse Recovery Over Specified Temperature  
Range (15 ns)  
Mechanical Characteristics  
Weight: 1.9 grams (approximately)  
1,3  
2,4  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads  
are Readily Solderable  
2, 4  
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds  
Shipped 50 units per plastic tube  
Available in 24mm Tape and Reel, 800 units per reel by adding a T4  
suffix to the part number  
1
3
CASE 418B–02  
Marking: MGRB1018  
2
D PAK  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
180  
V
RRM  
RWM  
R
V
DC Forward Current  
(T = 110°C)  
C
I
10  
20  
60  
A
A
DC  
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave, 20 kHz, T = 85°C)  
R
C
Non–Repetitive Peak Surge Current  
I
A
FSM  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
Operating Junction Temperature and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
55 to 175  
°C  
J
stg  
Thermal Resistance – Junction to Case  
– Junction to Ambient  
R
θJC  
R
θJA  
4.3  
53  
°C/W  
ELECTRICAL CHARACTERISTICS  
T =25°C T =125°C  
Maximum Instantaneous Forward Voltage (1), see Figure 2  
V
V
µA  
ns  
A
J
J
F
(I = 10 A)  
F
1.4  
1.1  
1.5  
1.1  
(I = 5 A)  
F
T =25°C T =125°C  
Maximum Instantaneous Reverse Current, see Figure 4  
I
R
J
J
(V = 180 V)  
R
25  
1
685  
120  
(V = 90 V)  
R
T =25°C T =125°C  
Typical Reverse Recovery Time (2)  
t
rr  
J
J
(V = 150 V, I = 5 A, di/dt = 200 A/µs)  
R
F
12.6  
13  
12.4  
12.7  
(V = 150 V, I = 10 A, di/dt = 200 A/µs)  
R
F
T =25°C T =125°C  
Typical Peak Reverse Recovery Current  
(V = 150 V, I = 5 A, di/dt = 200 A/µs)  
I
RM  
J
J
R
F
1.5  
1.6  
1.6  
1.7  
(V = 150 V, I = 10 A, di/dt = 200 A/µs)  
R
F
Note: This data sheet contains advance information only and is subject to change without notice.  
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.  
(2) trr measured projecting from 25% of IRM to ground.  
Motorola, Inc. 1995  

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