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MGJ6D121510SC PDF预览

MGJ6D121510SC

更新时间: 2024-11-21 20:42:43
品牌 Logo 应用领域
村田 - MURATA /
页数 文件大小 规格书
16页 865K
描述
DC-DC Regulated Power Supply Module,

MGJ6D121510SC 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:2.26模拟集成电路 - 其他类型:DC-DC REGULATED POWER SUPPLY MODULE
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MGJ6D121510SC 数据手册

 浏览型号MGJ6D121510SC的Datasheet PDF文件第2页浏览型号MGJ6D121510SC的Datasheet PDF文件第3页浏览型号MGJ6D121510SC的Datasheet PDF文件第4页浏览型号MGJ6D121510SC的Datasheet PDF文件第5页浏览型号MGJ6D121510SC的Datasheet PDF文件第6页浏览型号MGJ6D121510SC的Datasheet PDF文件第7页 
MGJ6 SIP/DIP Series  
s
5.7kVDC Isolated 6W Gate Drive SIP/DIP DC/DC Converters  
SELECTION GUIDE  
Output 1  
Output 2  
Order Code1  
Input  
Voltage  
Range  
Typical  
Application  
FEATURES  
V
mA  
W
V
mA  
W
nPatent protected  
V
See page 3  
IGBT  
nNo opto feedback  
MGJ6D051510DC  
MGJ6D121510DC  
MGJ6D241510DC  
MGJ6D052005DC  
MGJ6D122005DC  
MGJ6D242005DC  
MGJ6D051505DC  
MGJ6D121505DC  
MGJ6D241505DC  
MGJ6D051510SC  
MGJ6D121510SC  
MGJ6D241510SC  
MGJ6D052005SC  
MGJ6D122005SC  
MGJ6D242005SC  
MGJ6D051505SC  
MGJ6D121505SC  
MGJ6D241505SC  
4.5 - 9  
+15  
+15  
+15  
+20  
+20  
+20  
+15  
+15  
+15  
+15  
+15  
+15  
+20  
+20  
+20  
+15  
+15  
+15  
240  
240  
240  
240  
240  
240  
300  
300  
300  
240  
240  
240  
240  
240  
240  
300  
300  
300  
3.6  
3.6  
3.6  
4.8  
4.8  
4.8  
4.5  
4.5  
4.5  
3.6  
3.6  
3.6  
4.8  
4.8  
4.8  
4.5  
4.5  
4.5  
-10  
-10  
-10  
-5  
240  
240  
240  
240  
240  
240  
300  
300  
300  
240  
240  
240  
240  
240  
240  
300  
300  
300  
2.4  
2.4  
2.4  
1.2  
1.2  
1.2  
1.5  
1.5  
1.5  
2.4  
2.4  
2.4  
1.2  
1.2  
1.2  
1.5  
1.5  
1.5  
nOptimised bipolar output voltages for IGBT/  
nSiC & MOSFET gate drives  
9 - 18  
18 - 36  
4.5 - 9  
9 - 18  
IGBT  
IGBT  
nConfigurable dual outputs for all gate drive  
napplications:  
SiC  
+15V/-5V, +15V/-10V & +20V/-5V outputs  
SiC  
-5  
nReinforced insulation to UL60950  
nrecognised  
18 - 36  
4.5 - 9  
9 - 18  
SiC  
-5  
MOSFET  
MOSFET  
MOSFET  
IGBT  
-5  
nANSI/AAMI ES60601-1, 2MOPP recognised  
-5  
nCharacterised dv/dt immunity 80kV/ s at  
1.6kV  
µ
18 - 36  
4.5 - 9  
9 - 18  
-5  
-10  
-10  
-10  
-5  
nCharacterised partial discharge performance  
n5.7kVDC isolation test voltage ‘Hi Pot Test’  
nUltra low coupling capacitance 15pF  
nDC link voltage 3kVDC  
IGBT  
18 - 36  
4.5 - 9  
9 - 18  
IGBT  
SiC  
SiC  
-5  
n5V, 12V & 24V input voltages  
n105°C operating temperature  
18 - 36  
4.5 - 9  
9 - 18  
SiC  
-5  
MOSFET  
MOSFET  
MOSFET  
-5  
PRODUCT OVERVIEW  
-5  
Offering configurable dual output voltages of +15V/-  
10V, +20V/-5V and +15V/-5V, the MGJ6 series of  
DC-DC converters is ideal for powering ‘high side’  
and ‘low side’ gate drive circuits for IGBTs, Silicon  
Carbide and MOSFETs in bridge circuits.  
18 - 36  
-5  
A choice of asymmetric output voltages allows  
optimum drive levels for best system efficiency  
and EMI. The MGJ6 series is characterised for high  
isolation and dv/dt requirements commonly seen in  
bridge circuits used in motor drives and inverters.  
A disable/frequency synchronisation pin simplifies  
EMC filter design. The MGJ6 protection features  
include short circuit protection and overload  
protection.  
1. Components are supplied in tray packaging, please refer to package specification section for more details.  
All specifications typical at T =25°C, nominal input voltage and rated output current unless otherwise specified.  
For full details go to  
www.murata-ps.com/rohs  
A
www.murata-ps.com/support  
KDC_MGJ6C-SCDC.C01 Page 1 of 16  

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