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MGA-86576-TR2 PDF预览

MGA-86576-TR2

更新时间: 2024-11-09 14:53:19
品牌 Logo 应用领域
安捷伦 - AGILENT 射频微波
页数 文件大小 规格书
6页 95K
描述
Wide Band Low Power Amplifier, 1500MHz Min, 8000MHz Max, GAAS, CERAMIC PACKAGE-4

MGA-86576-TR2 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:SL,4LEAD,.07SQReach Compliance Code:unknown
风险等级:5.1Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:20 dB最大输入功率 (CW):13 dBm
安装特点:SURFACE MOUNT端子数量:4
最大工作频率:8000 MHz最小工作频率:1500 MHz
封装主体材料:METAL封装等效代码:SL,4LEAD,.07SQ
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:22 mA
表面贴装:YES技术:GAAS
最大电压驻波比:2.5Base Number Matches:1

MGA-86576-TR2 数据手册

 浏览型号MGA-86576-TR2的Datasheet PDF文件第2页浏览型号MGA-86576-TR2的Datasheet PDF文件第3页浏览型号MGA-86576-TR2的Datasheet PDF文件第4页浏览型号MGA-86576-TR2的Datasheet PDF文件第5页浏览型号MGA-86576-TR2的Datasheet PDF文件第6页 
Agilent MGA-86576  
1.5– 8 GHz Low Noise  
GaAs MMIC Amplifier  
Data Sheet  
Features  
• 1.6 dB Noise Figure at 4 GHz  
• 23 dB Gain at 4 GHz  
• +6 dBm P1dB at 4 GHz  
• Single +5 V Bias Supply  
Description  
Agilent’s MGA-86576 is an  
Surface Mount  
Ceramic Package  
Applications  
economical, easy-to-use GaAs  
MMIC amplifier that offers low  
noise and excellent gain for  
applications from 1.5 to 8 GHz.  
• LNA or Gain Stage for 2.4  
GHz and 5.7 GHz ISM Bands  
• Front End Amplifier for GPS  
Receivers  
• LNA or Gain Stage for PCN  
and MMDS Applications  
The MGA-86576 may be used  
without impedance matching as a  
high performance 2 dB NF gain  
block. Alternatively, with the  
addition of a simple series  
inductor at the input, the device  
noise figure can be reduced to  
1.6 dB at 4 GHz.  
• C-Band Satellite Receivers  
• Broadband Amplifier for  
Instrumentation  
Pin Connections  
4
GROUND  
Attention:  
RF OUTPUT  
Observe precautions for  
handling electrostatic  
sensitive devices.  
RF INPUT  
1
AND V  
d
The circuit uses state-of-the-art  
PHEMT technology with self-  
biasing current sources, a source-  
follower interstage, resistive  
feedback, and on chip impedance  
matching networks.  
3
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
GROUND  
2
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
A patented, on-chip active bias  
circuit allows operation from a  
single +5 V power supply. Current  
consumption is only 16 mA.  
Schematic Diagram  
RF OUTPUT  
AND V  
d
RF  
INPUT  
3
1
These devices are 100% RF tested  
to assure consistent performance.  
GROUND  
2
GROUND  
4

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