生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.78 |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 1200 V |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | 元件数量: | 6 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MG8Q6ES42 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
获取价格 |
|
MG90C601-25CB | TEMIC | Microprocessor, |
获取价格 |
|
MG90C601-33CB | TEMIC | Microprocessor, |
获取价格 |
|
MG90C601-33MB | TEMIC | Microprocessor, |
获取价格 |
|
MG90C602-25MB | TEMIC | Micro Peripheral IC, |
获取价格 |
|
MG90C602-33 | TEMIC | Micro Peripheral IC, |
获取价格 |