MG1052-11

更新时间： 2024-09-22 12:19:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	176K
描述
GUNN Diodes Anode Heat Sink

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MG1052-11 数据手册

GUNN Diodes

Anode Heat Sink

MG1041 – MG1059

Features

●

High Reliability

●

Low-Phase Noise

●

9.5–35.5 GHz Operation

●

Pulsed and CW Designs to 20 mW

Applications

●

Motion Detectors

●

Transmitters and Receivers

●

Beacons

●

Automotive Collision Avoidance Radars

Description

●

Radars

Microsemi’s GaAs Gunn diodes, epi-up (anode

heatsink), are fabricated from epitaxial layers grown

at MSC by the Vapor Phase Epitaxy technique. The

layers are processed using proprietary techniques

resulting in ultra- low phase and 1/f noise. The diodes

are available in a variety of microwave ceramic

●

Radiometers

●

Instrumentation

packages for operation from

9.5–35.5 GHz.

Microsemi

Rev: 2009-01-19

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

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