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MG10H4GM1 PDF预览

MG10H4GM1

更新时间: 2024-09-22 20:04:11
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网开关脉冲晶体管
页数 文件大小 规格书
1页 73K
描述
TRANSISTOR 10 A, 500 V, 0.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-48A1B, 11 PIN, FET General Purpose Power

MG10H4GM1 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-D11
针数:11Reach Compliance Code:unknown
风险等级:5.74配置:COMPLEX
最小漏源击穿电压:500 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-D11元件数量:4
端子数量:11工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MG10H4GM1 数据手册

  

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